D-(π-A)3 Type Low Bandgap Star-Shaped Fused-Ring Electron Acceptor with Alkoxy-Substituted Thiophene As Π-Bridge

Tong Wang,Weijie Wang,Xiaofu Wu,Hui Tong,Lixiang Wang
DOI: https://doi.org/10.1016/j.dyepig.2021.109329
IF: 5.122
2021-01-01
Dyes and Pigments
Abstract:As a strong electron-donating ?-bridge, alkoxy-substituted thiophene has been widely used in low bandgap fusedring electron acceptors (FREAs), while its application in star-shaped FREAs has never been explored. Herein, a donor-(?-acceptor)3 type low bandgap star-shaped FREA with ethylhexyloxy-thiophene ?-bridge, namely TITTOT-ICF, is synthesized. The enhanced intramolecular charge transfer of TITT-OT-ICF leads to a high-lying HOMO level, and thus a narrower optical band gap of 1.47 eV relative to its counterpart TITT-T-ICF with ethylhexyl-thiophene as ?-bridge (1.61 eV). When blending with a wide bandgap polymer donor PBDB-T, EQE spectrum of TITT-OT?ICF?based organic solar cell (OSC) device is extended to 880 nm, while that of PBDB-T: TITT-T?ICF?based device is limited to 800 nm. In spite of similar phase morphologies in both active layers, the broader photoresponse of PBDB-T: TITT-OT?ICF?based device leads to a higher short-circuit current density (JSC) of 16.95 mA cm-2, yielding a higher power conversion efficiency (PCE) of 8.23% in comparison with PBDBT: TITT-T?ICF?based device (JSC =14.33 mA cm-2, PCE = 7.53%). These results demonstrate a rational design of low bandgap star-shaped FREAs based on alkoxy-substituted thiophene as the ?-bridge for achieving relatively high JSC and PCE.
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