Effect of Zr:Sn Ratio in the PBLZST Ceramic Thick Films on the Energy Storage Characteristics

Zhou Chuanjie,Chen Hongwei,Gao Libin,Zhao Jinyu,Liang Tianpeng,Zhang Jihua
DOI: https://doi.org/10.1007/s10854-021-05603-4
2021-01-01
Journal of Materials Science Materials in Electronics
Abstract:Pb0.91Ba0.06La0.02(Zr0.95−xSnxTi0.05)O3 (PBLZST, x = 0.325, 0.35, 0.375, 0.4) thick films are prepared by solid-state reaction method and flow-casting method. Trace Ba2+ content is introduced to PLZST which is effective in narrowing the hysteresis loop, lowering the Curie temperature point, and improving the fatigue characteristics. Besides that, Zr:Sn ratios are adjusted to study its influence on the material’s energy storage characteristics. PBLZST ceramics with different Zr:Sn ratios are all in tetragonal perovskite structure. The increase of Sn4+ content promotes miniaturization of crystal grain and contributes to stability of antiferroelectric phase, together with enhances the phase transition field strength and breakdown field strength of PBLZST ceramics. The PBLZST ceramic has high energy storage efficiency, which is more than 80%. The maximum effective energy storage density of PBLZST ceramics at 1.94 J/cm3 is obtained when x = 0.35, and their energy storage efficiency is 81.9%, which confirms that they are the potential materials in the pulse energy storage components.
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