Abstract:Abstract A comparable concentration of carriers injected and transported into the active region, that is, balanced hole and electron injection, significantly affects the optoelectronic performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). In this study, we introduce a novel structure characterized by a carrier injection balanced modulation layer, incorporating a polarization-regulating gradient p -AlGaN in a DUV LED. We conducted a systematic examination of its impact on the carrier injection and transport processes. Theoretical simulations demonstrate the mitigation of abrupt variations in Al content at the interface between electron blocking layer/ p -AlGaN and p -AlGaN/ p -GaN within the valence bands. Consequently, holes are more likely to be injected into the active region rather than accumulating at these interfaces. Meanwhile, due to the reduced barrier height at the top of the valence band, the holes were efficiently transported into the quantum well and confined with comparable and balanced concentrations of electrons by suppressing overflow, thereby promoting the radiative recombination rate. Compared with the conventional DUV LED, the hole concentration and radiative recombination rate of the designed structure in the final quantum well are significantly increased to 179.8% and 232.3%, respectively. The spontaneous emission intensity achieves nearly twice at the same current injection density. Moreover, the efficiency droop is significantly suppressed when operated at a gradually increasing current density. This study presents a promising approach that can serve as a reference for achieving high-efficiency AlGaN-based DUV LEDs.

UV Light-Emitting Diode With Buried Polarization- Induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction

Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Efficient AlGaN-Based Deep-Ultraviolet LED with N-Side Located Tunnel Junction

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Performance evaluation of tunnel junction-based N-polar AlGaN deep-ultraviolet light-emitting diodes

Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Performance-boosted N-polar AlGaN Deep Ultraviolet Light-Emitting Diodes by a Top Tunnel Junction

n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes

Advantages of AlGaN Tunnel Junction in N-Polar 284nm Ultraviolet-B Light Emitting Diode

Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage

Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier

III-Nitride Deep UV LED Without Electron Blocking Layer

Performance Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Tailoring Polarization in Electron Blocking Layer

On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping

Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs

Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures

High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes