A Junction Temperature Monitoring Method for IGBT Modules Based on Turn-Off Voltage with Convolutional Neural Networks
Huimin Wang,Zhiliang Xu,Xinglai Ge,Yongkang Liao,Yongheng Yang,Yi Zhang,Bo Yao,Yuheng Chai
DOI: https://doi.org/10.1109/tpel.2023.3278675
IF: 5.967
2023-01-01
IEEE Transactions on Power Electronics
Abstract:Junction temperature monitoring (JTM) is essential for reliability evaluation and health management for insulated-gate bipolar transistor (IGBT) modules, and thus is extensively focused on in power electronics converters. However, many JTM methods for IGBT modules are criticized for providing inaccurate junction temperature information with strong load current dependence. To address this, a JTM method based on the turn- off voltage (TOV) and convolutional neural networks (CNN) is proposed in this article. In this method, the TOV is used as the junction temperature indicator, and the characterization behavior of the TOV during turn- off transient process is thoroughly analyzed. Then, the parameter dependence of the TOV is investigated. Considering the proposed JTM method may be subject to the issue of load current dependence and show an undesirable performance, the CNN is adopted to maintain the accuracy of junction temperature prediction due to its excellent global and local feature recognition capability. With this regards, the proposed JTM method enables to provide accurate junction temperature information under different conditions. Finally, the double-pulse tests and experimental tests are carried out to validate the effectiveness of the proposed JTM method.