Abstract:It is extremely difficult to obtain high output power with silicon based processes, which presents one of the greatest challenges for realizing fully integrated transceivers, especially at millimeter-wave frequencies. For this reason, various power combining methods have been proposed to achieve higher power levels.In this paper, a novel power combining method suitable for millimeter-wave applications is presented. The power combining network is synthesized in package utilizing wafer level packaging technology, with an array of power sources of moderate output power capability assumed to be distributed on chip, which means applying further combining in addition to existing on-chip power combining scheme for potentially even higher output power is possible.The power combining network is composed of more basic power combining units, each consisting of one substrate integrated waveguide (SIW) resonator coupling four lambda/4 standing-wave resonators, which can be synthesized using two quarter-wavelength vertical vias with one end open and the other end shorted. For power combining purpose, the open end of each lambda/4 resonator is connected to the differential output of one on-chip power source, while the shorted end is realized using one of the two metal plates of the SIW resonator. The coupling between the SIW resonator and lambda/4 resonators is through slotting on the metal plate to allow magnetic leakage so that oscillation in lambda/4 resonators will excite the SIW resonator to oscillate. As the quality factor of the SIW resonator is much larger than those of lambda/4 resonators, energy is mainly confined in the cavity of the SIW resonator so that power combing is achieved.Example design for 60 GHz application is detailed in the paper with simulation results using commercial CST software showing the effectiveness of the power combining method.

Compact four‐way quasi‐rectangular cavity power combiner with high isolation and high power‐combining efficiency

Novel Millimeter-Wave Power Combining Utilizing Wafer Level Packaging Technology

A Novel Compact Four-Way Power Combiner with an Embedded Microstrip-to-Waveguide Transition for Ka-band Power Amplifiers

X‐band Compact Coaxial Power Combiner for High‐power Applications

Compact Four-Way Radial-Cavity-Based Power Divider/Combiner with High Power and High Isolation

An Isolated Three-Way Power Combiner via Magnetically Coupled Microstrip Ring Probes

Compact coaxial-waveguide four-way power divider with low insertion loss and high output isolation

Investigation of Compact Broadband Quasi-Planar Rectangular Ring Cavity Power-Combining Amplifier

Terahertz Four-Way Out-of-phase Waveguide Power Combiner with Low Insertion Loss

Compact U-band 32-way ring-cavity spatial power combiner with low insertion loss

Compact Different‐/same‐frequency Power Combining Circuit with High Isolation and High Frequency Selectivity

A Compact Broadband Power Combiner for High-Power, Continuous-Wave Applications

Compact W-band Multi-Layer Four-Way SIW Power Combiner/divider

A compact four-way power combiner/divider in W-Band

Compact Quasi-Planar Four-Way Power Divider with Wide Isolation Bandwidth

Four-way power divider/combiner based on waveguide-microstrip structure in W-band

Low-insertion-loss Gysel Power Combiner with High Power Density and High Isolation

Multilayer Four-Way Power Divider with Improved Isolation Performance

A Novel Four-Way Ka-Band Spatial Power Combiner Based on HMSIW

A Multi-Octave Millimeter-Wave Power Combiner Using Rectangular Coaxial Transmission Line

Novel millimeter wave power-combining system in 3-D packaging level