Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100)

Shubham Kumar Parate,Sandeep Vura,Subhajit Pal,Upanya Khandelwal,Rama Satya Sandilya Ventrapragada,Rajeev Kumar Rai,Sri Harsha Molleti,Vishnu Kumar,Girish Patil,Mudit Jain,Ambresh Mallya,Majid Ahmadi,Bart Kooi,Sushobhan Avasthi,Rajeev Ranjan,Srinivasan Raghavan,Saurabh Chandorkar,Pavan Nukala

DOI: https://doi.org/10.1038/s41467-024-45903-x

IF: 16.6

2024-02-16

Nature Communications

Abstract:Abstract Lead-free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients ( M 31 ) at frequencies as large as 5 kHz (1.04×10 −14 m 2 /V 2 at 1 kHz, and 3.87×10 −15 m 2 /V 2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained upon cycling upto 6 million times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO 3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates well with the observed giant electrostriction-like response. These films show large coefficient of thermal expansion (2.36 × 10 −5 /K), which along with the giant M 31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films.

multidisciplinary sciences

What problem does this paper attempt to address?

This paper attempts to address the issue of achieving large electrostriction effects in lead-free materials under high-frequency conditions (greater than 1 kHz). Specifically, the researchers achieved a record-breaking electrostriction coefficient (M31) in barium titanate thin films through defect engineering, and the significant effect was maintained at frequencies as high as 5 kHz. Additionally, these films remained stable in performance after 6 million cycles, demonstrating their potential application value in nanoelectromechanical systems (NEMS). The study also found that the dielectric relaxation characteristics of these materials are closely related to the large electrostriction response, further proving the importance of defect engineering in enhancing electromechanical responses. This work provides important guidance for the development of lead-free, CMOS-compatible materials suitable for high-frequency conditions.