Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100

Sandeep Vura,Shubham Kumar Parate,Subhajit Pal,Upanya Khandelwal,Rajeev Kumar Rai,Sri Harsha Molleti,Vishnu Kumar,Rama Satya Sandilya Ventrapragada,Girish Patil,Mudit Jain,Ambresh Mallya,Majid Ahmadi,Bart Kooi,Sushobhan Avasthi,Rajeev Ranjan,Srinivasan Raghavan,Saurabh Chandorkar,Pavan Nukala

2023-03-07

Abstract:Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M31) at frequencies as large as 5 kHz (1.04 x 10-14 m2 per V2 at 1 kHz, and 3.87 x 10-15 m2 per V2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained even after cycling the devices >5000 times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates very well with the observed giant electrostrictive response. These films show large coefficient of thermal expansion (2.36 x 10-5/K), which along with the giant M31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films.

Materials Science

What problem does this paper attempt to address?

This paper aims to address the issue of achieving large electromechanical responses in lead-free, silicon-compatible materials for nanoelectromechanical systems (NEMS) devices. Specifically, the research team achieved a record-breaking electrostriction coefficient (M31) on barium titanate (BaTiO3) thin films through a defect engineering strategy and maintained this performance at frequencies up to 5 kHz. These films are non-ferroelectric and exhibit symmetry different from stoichiometric barium titanate, featuring twin boundaries and polarization-like regions. The study found that defect-induced dielectric relaxation is closely related to the large electrostriction response. Additionally, the work demonstrated that these films have a large thermal expansion coefficient, indicating that defects significantly increase the lattice anharmonicity. This research provides important guidance for developing lead-free thin film materials that can maintain large electromechanical responses at higher frequencies.