Abstract:Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe2) is one typical example with p-type semiconductor characteristics. Bulk WSe2 has an indirect band gap (∼1.2 eV), which transits into a direct band gap (∼1.65 eV) in monolayers. Monolayer WSe2, therefore, is of considerable interest as a new electronic material for functional electronics and optoelectronics. However, the controllable synthesis of large-area WSe2 atomic layers remains a challenge. The studies on WSe2 are largely limited by relatively small lateral size of exfoliated flakes and poor yield, which has significantly restricted the large-scale applications of the WSe2 atomic layers. Here, we report a systematic study of chemical vapor deposition approach for large area growth of atomically thin WSe2 film with the lateral dimensions up to ∼1 cm2. Microphotoluminescence mapping indicates distinct layer dependent efficiency. The monolayer area exhibits much stronger light emission than bilayer or multilayers, consistent with the expected transition to direct band gap in the monolayer limit. The transmission electron microscopy studies demonstrate excellent crystalline quality of the atomically thin WSe2. Electrical transport studies further show that the p-type WSe2 field-effect transistors exhibit excellent electronic characteristics with effective hole carrier mobility up to 100 cm2 V–1 s–1 for monolayer and up to 350 cm2 V–1 s–1 for few-layer materials at room temperature, comparable or well above that of previously reported mobility values for the synthetic WSe2 and comparable to the best exfoliated materials.

Large-Area Freestanding Weyl Semimetal WTe2 Membranes

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetal WTe 2 Films

Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetal WTe2 Films

Ultrahigh Yield and Large-Scale Fast Growth of Large-Size High-Quality Van Der Waals Transition-Metal Telluride Single Crystals

Large-area synthesis of high-quality monolayer 1T'-WTe2 flakes

Centimeter-Scale, Large-Area, Few-Layer 1T′-Wte2 Films by Chemical Vapor Deposition and Its Long-Term Stability in Ambient Condition

Towards a Large-Area Freestanding Single-Crystal Ferroelectric BaTiO3 Membrane

Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

A Computational Study of Monolayer Hexagonal WTe2 to Metal Interfaces

Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances

Van der Waals Epitaxy of Weyl-Semimetal T d -WTe 2

Observation of the out-of-plane polarized spin current from CVD grown WTe2

Synthesis of WTe2 Nanowires with Increased Electron Scattering

Direct Visualization of Large‐Scale Intrinsic Atomic Lattice Structure and Its Collective Anisotropy in Air‐Sensitive Monolayer 1T’‐ WTe 2

Observation of an anisotropic ultrafast spin relaxation process in large-area WTe<sub>2</sub> films

Coherent Heterostructure Mesh Grown by Gap-Filling Epitaxial Chemical Vapor Deposition

Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices