The Effect of Quantum Dot Layer Thickness on the Quantum Dot Light Emitting Diode Luminescence Properties

Zhi Li,Jing Chen,Wei Lei
DOI: https://doi.org/10.3969/j.issn.2095-2783.2014.01.001
2014-01-01
Abstract:Quantum dot light emitting diode devices (QD-LEDs)havebeen developedwith wet spin coating technique.In the QDLEDs,PEDOT is used as hole injection layer,TFB as electron transport layer,quantum dots as emissive layer,and inorganic titanium dioxide (TiO2 )as a hole transport layer.In the same processing conditions,thequantum dot layer spin speed wasadjusted-from 800 to 1 100 r/min,and quantum dot light emitting diode devices (QD-LEDs)prepared with different thicknesses.Experi-ment results show that,when the spin-coating speed of quantum dot layer is 900 r/min and quantum dot layer thickness is 30 nm,the QD-LED performance is best with a lowturn-on voltage of 5.5V.
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