A fully-integrated low-power 3.1-10.6GHz UWB LNA in 0.18μm CMOS
Xie Haolu,Wang Xin,Albert Wang,Wang A N G Zhihua,Zhang Chun,Zhao Bin
DOI: https://doi.org/10.1109/RWS.2007.351801
2007-01-01
Abstract:Ultra wideband (UWB) radio technology has many advantages: i.e., ultra wide 7.5GHz spectrum bandwidth, extremely high throughput, very low power, etc. This paper presents a single-chip low-power 3.1-10.6GHz low-noise amplifier (LNA) designed for pulse-based full-band UWB transceivers, which features an improved shunt-series feedback topology to achieve desirable ultra broadband gain and noise performance. The LNA is implemented in a commercial 0.18μm CMOS process and the measured specifications are: a flat gain of 12dB and a minimum noise figure (NF) of 3.8dB across 3.1-10.6GHz bandwidth, a very low DC power of 9.8mW at 1.8V supply, Sn of < -9dB, and S 22 of < -15dB. It achieves a gain flatness of 0.27 and a 1-dB compression point of better than -0.8dBm. ©2007 IEEE.