Research Progress on Doping of One-Dimensional ZnO Nanostructures

Miao HE,Jianlin CHEN,Penghui LI,Jian CHEN,Yanjie REN,Yi ZHOU,Zhuoyin PENG
DOI: https://doi.org/10.7502/j.issn.1674-3962.2018.05.09
2018-01-01
Abstract:One-dimensional ZnO nanostructures have been extensively studied and applied in diverse fields,due to their wide bandgap semiconductor property,piezoelectricity,large exciton binding energy,anisotropism and low dimensional nanostructure characteristics.Many routes can be adopted to grow diverse morphological one-dimensional ZnO nanostructures which have been used in different fields such as nanogenerators,solar cells,photoelectrochemical water splitting,light emitting diodes,lasers,gas sensitive devices,spin electronics,etc.However,there are many shortcomings in one-dimensional intrinsic ZnO nanostructures,which limit their applications.In recent years,the one-dimensional doped ZnO nanostructures have drawn great attention since doping can enhance or give them some novel and peculiar characteristics.This article gives a comprehensive overview of the progress of one-dimensional doped ZnO nanostructures that has been made within the context of doping types,including n-doping,p-doping,diluted magnetic semiconductor doping,etc.Furthermore,the problems for the doping of one-dimensional ZnO nanostructures have been discussed,and the prospect of further research and development have been proposed.
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