Thermoelectric Properties of Boron Doped SiGe Alloys by Ball Milling

Jing XU,Xinbing ZHAO,Tiejun ZHU,Xuzhao HE
DOI: https://doi.org/10.14136/j.cnki.issn 1673-2812.2017.02.001
2017-01-01
Abstract:SiGe alloy based thermoelectric(TE) materials have attracted widely attention for decades as a kind of traditional high temperature TE materials.In this study,p-type B doped SiGe alloys were prepared by ball milling.B doping effectively increases the carrier concentration and optimizes the electrical properties.Lattice thermal conductivity of the material is reduced by the enhanced boundary scattering which is caused by the reduced grain sizes due to ball milling.In addition,lattice thermal conductivity of the material is further reduced due to the point defect scattering and carrier-phonon scattering caused by doping.At room temperature,the thermal conductivity of Si0.8 Ge0.2 B0.04 is ~ 4Wm-1 K 1.Due to the improvement of the electrical transport properties and the decreased thermal conductivity,the figure of merit zT is improved.The maximum figure of merit zT reaches 0.42 for the sample Si0.8Ge0.2B0.04 at 850K,2.5 times higher than that of Si0.8 Ge0.2 B0.002.
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