Material Removal Mechanism Of Nanoparticle Colloid Jet Polishing Based On Molecular Dynamics Simulation

Wang Xing,Zhang Yong,Xu Qin,Cui Zhong-Ming,Zhang Fei-Hu
DOI: https://doi.org/10.11933/j.issn.1007-9289.20160809001
2017-01-01
China surface engineering
Abstract:The material removal mechanism of the nanoparticle colloid jet polishing was investigated by the molecular dynamics simulation of the collision between the SiO2 nanoparticle and single crystal silicon workpiece (100). The simulation results show that the collision between the 7 nm nanoparticle with velocity of 50 m/s and the single crystal silicon workpiece cannot change the atom arrangement of the workpiece. When the velocity of the nanoparticle is higher than 250 m/s, the atom arrangement of the single crystal silicon workpiece can be changed. The machining of the nanoparticle colloid jet polishing process on the single crystal silicon workpiece was experimentally investigated. The atom arrangement of the single crystal silicon workpiece before and after machining was characterized by laser Raman spectroscopes. The results is in good agreement with that of the molecular dynamics simulation. The chemical bonds between the SiO2 nanoparticle and the single crystal silicon atoms were also been studied by X-ray photoelectron spectroscopy. Both the simulated and experimental results show that the mechanical effects of nanoparticles during the nanoparticle colloid jet polishing process cannot remove the workpiece material directly. The removal of the material is the combined influence of the mechanical effect and chemical effect between the nanoparticles and the workpiece.
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