Process Window Improvement Due to OAI and PSM for ArF Immersion Lithography

HUANG Guo-sheng,LI Yan-qiu

DOI: https://doi.org/10.3969/j.issn.1672-6030.2005.01.008

2005-01-01

Nanotechnology and Precision Engineering

Abstract:Process window improvement is presented due to off-axis illumination(OAI) and phase-shifting mask(PSM) for 193 nm immersion lithography at 65 nm node. The process window under 3/4 annular and 3/4 quasar illumination at 5% exposure latitude is explored by optical imaging simulation. Line/space pairs of line-to-space ratio 1: 1 (dense pattern), 1:2(semi-dense pattern), 1:4( isolated pattern) on binary mask and alternate phase-shifting mask(AltPSM) are consi-dered.Moreover, comparison of process window defined by depthof focus at 5% exposure latitude is made under various mask and illumination modes. The result shows ( 1 ) there is a wide area of numerical aperture and partial coherence for the comparatively large process window; (2) compared with conventional illumination on binary mask, depth of focus (DOF) will increase 100%0 to 150%0, if alternate phase-shifting mask, annular or quasar illumination are applied.