Abstract:Modulation of visible light has been easily achieved for decades, but modulation of terahertz (THz) light still remains a challenge. To address this issue, the Fresnel equations have been developed to describe a conductive interface in a total internal reflection geometry and reveal a new approach for modulation. To demonstrate this new mechanism, a broadband device achieving a modulation depth greater than 90% between 0.15 and 0.4 THz, and reaching a maximum of 99.3% at 0.24 THz has been designed. The modulation is achieved by applying a gate voltage between −0.1 and 2 V to a graphene layer in a total internal reflection geometry. Compared to conventional designs, the high modulation is realized without assistance from metamaterial structures, resonant cavities, or multistacked graphene layers. Thus, the design is efficient and easy‐to‐fabricate and can be easily retrofitted to most existing THz systems. This work opens up a new avenue of research as the device has verified the theory and demonstrates how it can be used to make practical devices, bringing a promising new paradigm for THz modulation, thin‐film sensing, and noninvasive material characterization. Here, a new modulation approach and physical device with a high modulation depth (up to 99.3%) across 0.1–0.7 THz is presented. The device demonstrates that the new theory can be applied to make practical devices, bringing a promising new paradigm for terahertz modulation, thin‐film sensing, and noninvasive material characterization.

A graphene-based THz spectral active control

Electrically Tunable Terahertz Wave Modulator Based on Complementary Metamaterial and Graphene

A tunable THz wave modulator based on graphene

Low-bias active control of terahertz waves by coupling large-area CVD graphene to a terahertz metamaterial.

Gate-tuned graphene meta-devices for dynamically controlling terahertz wavefronts

High-contrast terahertz wave modulation by gated graphene enhanced by extraordinary transmission through ring apertures.

Graphene-based nonvolatile terahertz switch with asymmetric electrodes

Full-range Gate-controlled Terahertz Phase Modulations with Graphene Metasurfaces

Active Control of Terahertz Amplitude and Phase Based on Graphene Metasurface

Optically controlled graphene based terahertz modulator

Modulation of far-infrared light transmission by graphene-silicon Schottky junction

Graphene controlled Brewster angle device for ultra broadband terahertz modulation

Graphene Based Terahertz Light Modulator in Total Internal Reflection Geometry

Active Control of Asymmetric Fano Resonances with Graphene–Silicon‐Integrated Terahertz Metamaterials

Electrolyte gated graphene terahertz amplitude modulators

Electrically Tunable Goos–Hänchen Effect with Graphene in the Terahertz Regime

Integrated Terahertz Graphene Modulator with 100% Modulation Depth

Enhancing the Efficiency of Graphene-Based THz Modulator by Optimizing the Brewster Angle.

Active Graphene-Based Terahertz Dual-Band Modulator Implemented in the Presence of External Fields

Mechanical Terahertz Modulation Based on Single‐Layered Graphene

Extraordinary Control of Terahertz Beam Reflectance in Graphene Electro-Absorption Modulators.