Abstract:This study investigates a Fermi-level-reconfigurable terahertz wavefront modulator composed of a hybrid material comprising graphene, silver metal, and silicon dioxide. Through theoretical simulation, analysis, and experimental investigations, it is found that graphene plays a crucial role in enhancing the performance of the modulator. Specifically, the presence of graphene increases the limiting factor of the modulator by 0.281, reduces the normalized modal field area by 0.15, decreases the transmission loss, and lowers the gain threshold by 30097 cm−1, thereby improving the efficiency, reliability, and stability of the device. The silicon dioxide and silver metal in the structure act as the primary reflective materials, achieving the effect of a metallic lens and validating the modulator's capability for efficient defocusing. Further investigations reveal that the carrier concentration of graphene can be easily controlled, allowing for manipulation of its physical properties through Fermi-level modulation. When incident light passes through the graphene array, it induces phase variations, altering the transmission path of light and thereby affecting the position of the defocused focal point, enabling dynamic adjustability. Under low Fermi-level control, the modulator achieves a 2πphase adjustment range with an average reflectivity of 75%. Thus, this provides potential for practical applications of more dynamic and tunable microdevices, particularly in the field of laser cutting technology and etching processes.

Active Graphene-Based Terahertz Dual-Band Modulator Implemented in the Presence of External Fields

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Low-bias active control of terahertz waves by coupling large-area CVD graphene to a terahertz metamaterial.

High-speed and Broadband Terahertz Wave Modulators Based on Large-Area Graphene Field-Effect Transistors.

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Active Modulation of an All-Dielectric Metasurface Analogue of Electromagnetically Induced Transparency in Terahertz

Flexible Terahertz Modulators Based on Graphene FET with Organic High-K Dielectric Layer

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Giant Frequency Tunability Enabled by External Magnetic and a Gate Electric Fields in Graphene Devices

Broadband Terahertz Modulator Based on Graphene Metamaterials

Flexible Terahertz Modulator Based on Coplanar-Gate Graphene Field-Effect Transistor Structure.

Achieving 100% amplitude modulation depth in a graphene-based tuneable capacitance metamaterial

Gbps Terahertz External Modulator Based on a Composite Metamaterial with a Double-Channel Heterostructure.

Dynamic Tunable and Switchable Broadband Near-Infrared Absorption Modulator Based on Graphene-Hybrid Metasurface

Tuning the Optical Modulation of Wideband Terahertz Waves by the Gate Voltage of Graphene Field Effect Transistors

Large-Area Graphene Fet Based Broadband Terahertz Modulator

Graphene Field Effect Transistor-Based Terahertz Modulator with Small Operating Voltage and Low Insertion Loss