High-speed and Broadband Terahertz Wave Modulators Based on Large-Area Graphene Field-Effect Transistors.

Qi Mao,Qi-Ye Wen,Wei Tian,Tian-Long Wen,Zhi Chen,Qing-Hui Yang,Huai-Wu Zhang
DOI: https://doi.org/10.1364/ol.39.005649
2014-01-01
Abstract:We present a broadband terahertz wave modulator with improved modulation depth and switch speed by cautiously selecting the gate dielectric materials in a large-area graphene-based field-effect transistor (GFET). An ultrathin Al2O3 film (∼60  nm) is deposited by an atomic-layer-deposition technique as a high-k gate dielectric layer, which reduces the Coulomb impurity scattering and cavity effect, and thus greatly improves the modulation performance. Our modulator has achieved a modulation depth of 22% and modulation speed of 170 kHz in a frequency range from 0.4 to 1.5 THz, which is a large improvement in comparison to its predecessor of SiO2-based GFET.
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