Temperature Distribution Simulation of InGaAsP/InGaAsP Semiconductor Lasers with Double-Channel Ridge-Waveguide Structure

Xiao Li,Ruiying Zhang,Chunyang Guo,Yue Zhao
DOI: https://doi.org/10.13290/j.cnki.bdtjs.2019.05.006
2019-01-01
Abstract:Heat distribution in InGaAsP /InGaAsP multiple quantum wells (MQWs) doublechannel ridge waveguide (DCRW) lasers with a laser wavelength of 1 550 nm was simulated by using a two-dimensional finite element method (FEM). The effects of the passivation material,channel width, Au layer thickness and graphene filling on thermal dissipation of lasers were systematically investigated. The simulation results show that all the above parameters have influence on temperature and heat distribution of the active region of the laser. Without graphene,the temperature rise of the lasers is improved with the decrease of the channel width. When graphene is filled in the channel,the temperature rise of the lasers is improved with the increase of the channel width and the graphene thickness. Finally,the temperature rise in the optimized structure with AlN passivation layer,Au thickening layer and graphene filling is 6 ℃ less than that in unoptimized structures. Such results offer a reference for the design and fabrication of InGaAsP /InGaAsP lasers,which aims at improving their heat dissipation performance. Moreover, these results may also provide a reference for InP-based photonic integrated circuit to improve their heat dissipation performance.
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