A Transient Enhanced Output-Capacitor-Less NMOS Low Dropout Regulator

Wenkai CHEN,Bin LI,Zhaohui WU
DOI: https://doi.org/10.13911/j.cnki.1004-3365.2017.04.014
2017-01-01
Abstract:A transient response enhanced and output-capacitor-less NMOS low dropout regulator (LDO) with onchip digital driven was proposed.The capacitor coupling dynamic biasing and push-pull dual-loop power MOSFETs were used in the LDO,and the transient speed of the LDO had been enhanced significantly.Based on a 0.35 μm BCD process,the simulation results showed that the LDO had an undershoot voltage of 42 mV,an over shoot voltage of 66 mV,and a settling time of 323 ns within 0.1~100mA load currentat 100 ns transition time.The total quiescent current of the LDO was 50 μA,and the maximum load current was 100 mA.
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