Enhanced Electron Field Emission in B-doped Carbon Nanotubes
J.-C. Charlier,M. Terrones,M. Baxendale,V. Meunier,T. Zacharia,N. L. Rupesinghe,W. K. Hsu,N. Grobert,H. Terrones,G. A. J. Amaratunga
DOI: https://doi.org/10.1021/nl0256457
IF: 10.8
2002-01-01
Nano Letters
Abstract:Field emission properties of B-doped carbon nanotubes are investigated from both theoretical and experimental standpoints. Using tight-binding and ab initio calculations, it is observed that B-saturating tip edges of carbon nanotubes induce the presence of large peaks within the local density of states (LDOS) located in an energy region close to the Fermi level (Ef). These localized states suggest a field emission enhancement for the B-doped tubes. In addition, ab initio theoretical results indicate that the work function for B-doped tubes is 1.7 eV lower when compared to pure carbon-terminated nanotubes. Experimentally, it is found that B-doped tubes, which are produced by arc discharge techniques and contain B mainly at the tips, exhibit stable electron field emission at lower turn-on voltages (1.4 V/mum) when compared to pure single- and multiwalled carbon nanotubes (2.8 and 3.0 V/mum, respectively) measured under the same conditions. We strongly believe our results will bring new insights in the fabrication of stable field emission sources.