Abstract:AlN films have been grown on nitrided and non-nitrided Al substrates by pulsed laser deposition (PLD) technology at 450 degrees C. The surface morphology, crystalline quality, and interfacial property of the as-grown AlN films on nitrided and non-nitrided Al substrates have been investigated systematically. It is found that the as-grown similar to 300 nm-thick AlN films on nitrided Al substrates show the very smooth surface with a root-mean-square (RMS) surface roughness of 1.5 nm, high crystalline quality with full-width at half-maximum (FWHM) values for AlN(0002) and AlN(10-12) X-ray rocking curves (XRCs) of 0.6 degrees and 0.9 degrees, and sharp and abrupt interfaces. These results are in striking contrast to those of similar to 300 nm-thick AlN films grown on non-nitrided Al substrates. The as-grown similar to 300 nm-thick AlN films on non-nitrided Al substrates show relatively rough surface with a RMS surface roughness of 4.0 nm, poor crystalline quality with FWHM values for AlN(0002) and AlN(10-12) XRCs of 1.1 degrees and 1.5 degrees, and a nm-thick interfacial layer. Based on the characterizations, the effect of Al substrates nitridation and the growth mechanism of AlN films grown on nitrided Al substrates by PLD are hence proposed. This work provides an effective approach for the growth of high-quality AlN films on Al substrates for the future application of AlN-based devices. (C) 2015 Elsevier B.V. All rights reserved.

Development of Structural Characterization and Properties of AIN Film Prepared by Pulsed Laser Deposition

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Highly Oriented AlN Thin Films Grown on Si(100) Substrates at Room Temperature by Pulsed Laser Deposition

The Preparation and Characterization of Preferred (110) Orientation Aluminum Nitride Thin Films on Si (100) Substrates by Pulsed Laser Deposition

Influences of Laser Energy Density and Annealing on Structure Properties of AIN Films Prepared by Pulsed Laser Deposition

Structural and Mechanical Properties of AlN Films by Pulsed Bias Arc Ion Plating

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

Investigation of AlN Thin Films Prepared by Pulsed Excimer Laser Deposition

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

Review on Deposition of C-Axis Oriented AlN Films by Reactive Magnetron Sputtering

Synthesis of High-Quality AlN Films on (la,sr) (al,ta)o3 Substrates by Pulsed Laser Deposition

Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

A New Reactive Pulsed Laser Ablation Technique for the Deposition of Hard Carbon and Carbon-Nitride Thin Films

High Quality Transferable AlN Thin Film by PLD

Effect of Target–substrate Distance on the Quality of AlN Films Grown on Si(110) Substrates by Pulsed Laser Deposition

Sputtered AIN Films for Semiconductor Lasers

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

AlN/nitrided Sapphire and AlN/non-nitrided Sapphire Hetero-Structures Epitaxially Grown by Pulsed Laser Deposition: A Comparative Study