Phase transition characteristics, electrical and optical properties of AgNbO 3 crystals grown by flux method
Niu Jia-Lin,Dong Si-Yuan,Wei Yong-Xing,Jin Chang-Qing,Nan Rui-Hua,Yang Bin,,,
DOI: https://doi.org/10.7498/aps.73.20230984
IF: 0.906
2024-01-01
Acta Physica Sinica
Abstract:AgNbO 3 , with the antiferroelectric ordering and huge polarization (> 50 μC/cm 2 ), has potential applications in smart electronic devices, such as energy storage dielectrics, large displacement actuators, and electrocaloric cooling device. Large electro-strain and excellent energy storage properties have been reported in AgNbO 3 -based ceramics. Nevertheless, the lack of systematic research on the AbNbO 3 single crystals increases the difficulty of further understanding of their structure-property relationship. In this paper, c oriented AgNbO 3 single crystals with a large size (maximum size 5×4×4 mm 3 ) and high quality were successfully grown by the flux method. The phase transition characteristics were studied by the X-Ray diffraction (XRD), temperature dependence of dielectric data and AC Impedance, polarized light microscope (PLM) photos, and differential scanning calorimetry (DSC) curves. The electrical and optical properties were studied by the ferroelectric and electro-strain responses, optical absorbance spectrum and photo-dielectric effect. The AgNbO 3 single crystals with the M phase exhibit the same domain structure. When the structure changes from M 2 to M 3 , the contrast of the PLM images is darkened. Correspondingly, the conductivity and dielectric loss significantly increase, relating to the dynamic behaviors of the carriers. Interestingly, no exothermic or endothermic peak in connection with the M 2 -M 3 transition was observed. The active energy for the M 3 phase AgNbO 3 single crystals is~1.24 eV. When the structure changes from orthogonal M 3 to paraelectric orthogonal O, the domain structure disappears and the contrast becomes darker. The finding indicates that the anisotropy of the crystals disappears. At the same time, an obvious thermal hysteresis observed in the DSC curve reveals that the M 3 -O transition is first-order. At room temperature, the direct band gap of AgNbO 3 single crystals is~2.73 eV, which is slightly narrower than that of AgNbO 3 ceramics. Below the critical electric field, AgNbO 3 single crystals shows electro-strain of 0.076% under E m =130 kV/cm. The obtained electro-strain value under the same electric field is much higher than that of AgNbO 3 ceramics. The relative permittivity increases from 70 to 73 under the green laser irradiation, showing an apparent photo-dielectric effect. We believe our study could assist in further understanding of the phase transition characteristics and physical properties in AgNbO 3 single crystals.
physics, multidisciplinary