Abstract:Layered transition metal dichalcogenides (TMDs) are being considered as a promising alternative channel material in ultra-thin and low power nanoelectronics, due to the significant tunability of their electronic properties via mechanisms such as mechanical strain, control of the material thickness, application of an external field, impurities, doping, alloying, or altering the substrate nature. Initially, monolayer TMDs as counterparts to graphene captured the attention of the scientific community owing to their semiconductor nature with sizable band gaps. However, certain physical and chemical properties of TMDs, such as their oxygen reactivity and stability in air need to be more completely understood in order to crystallize the promising superior performance of TMD-based electronic devices. Here, a comparative analysis of the stability of various TMDs (MX2: , W; , Se) in air is performed using density-functional theory (DFT) as well as x-ray photoelectron spectroscopy (XPS). We find that the surface chemistry of the basal plane of sulfides and selenides is relatively stable in air although for completely different reasons, which can be explained by investigating oxygen dissociative adsorption kinetics and thermodynamics. On the contrary, the edge of MX2 nanoribbons shows strong driving forces towards O2 dissociation and chemisorption. Our combined theoretical and experimental investigation reveals that the air stability of TMDs should not be placed in the same footing that other 2D materials, like graphene. Thus, this work highlights the importance of having controlled oxygen environment during crystal exfoliation/growth and defect passivation in order to provide high quality uniform materials for TMD-based device fabrication.

Reconstructed edges of T phase transition metal dichalcogenides

Titanium Self-Intercalation Induced Formation of Orthogonal (1 × 1) Edge/Surface Reconstruction in 1T-Tise2: Atomic Scale Dynamics and Mechanistic Study

In-situ Fabrication of Mo 6 S 6 -Nanowire-terminated Edges in Monolayer Molybdenum Disulfide

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Titanium Self-Intercalation Induced Formation of Orthogonal (1 × 1) Edge/Surface Reconstruction in 1T-TiSe 2 : Atomic Scale Dynamics and Mechanistic Study

Impact of Polar Edge Terminations of the Transition Metal Dichalcogenide Monolayers During Vapor Growth

Phase-Controlled 1T Transition-Metal Dichalcogenide-Based Multidimensional Hybrid Nanostructures

Toward Edge Engineering of Two-Dimensional Layered Transition-Metal Dichalcogenides by Chemical Vapor Deposition

Towards edge engineering of two-dimensional layered transition-metal dichalcogenides by chemical vapor deposition

Distinct Reconstruction Patterns and Spin-Resolved Electronic States along the Zigzag Edges of Transition Metal Dichalcogenides

Local Engineering of Topological Phase in Monolayer MoS 2

Local engineering of topological phase in monolayer MoS2

Realization of 2/3-layer transition metal dichalcogenides

Evolutionary Pathways of T-Phase Transition Metal Dichalcogenides: A Comprehensive Study of Pt x Se y Clusters

Tunable active edge sites in PtSe2 films towards hydrogen evolution reaction

Unraveling High-Yield Phase-Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates.

Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: basal versus edge oxidation

Edge Epitaxy of Two-Dimensional MoSe2 and MoS2 Nanosheets on One-Dimensional Nanowires.

Phase Engineering of Two‐Dimensional Transition Metal Dichalcogenides

Ab initio Investigation of Structural Stability and Exfoliation Energies in Transition Metal Dichalcogenides based on Ti-, V-, and Mo-Group Elements