Modeling the Dependence of Single-Event Transients on Strike Location for Circuit-Level Simulation
Lili Ding,Wei Chen,Tan Wang,Rongmei Chen,Yinhong Luo,Fengqi Zhang,Xiaoyu Pan,Huabo Sun,Lei Chen
DOI: https://doi.org/10.1109/tns.2019.2904716
IF: 1.703
2019-01-01
IEEE Transactions on Nuclear Science
Abstract:The dependence of single-event transients on strike location is studied and integrated into the bias-dependent single-event model for circuit simulation. Two nondimensional parameters are introduced, including a drift factor and a diffusion factor to produce the accurate single-event current pulse consisting of drift and diffusion components for each related active region. By translating into the bias-dependent model, considering the current path between well contacts, and modeling the impact of bipolar amplification effects, it is able to predict the charge collection when striking at various strike locations. Circuit-level simulation results agree well with TCAD ones for various circuit blocks, including a single inverter, inverter chains of various layout designs, and OR3 gate. In addition, good agreement with experimental results has been reached, proving the reasonableness of the proposed circuit-level single-event effect (SEE) simulation approach.