Abstract:Computation-In-Memory (CIM) using memristive devices is a promising approach to overcome the performance limitations of conventional computing architectures introduced by the von Neumann bottleneck which are also known as memory wall and power wall. It has been shown that accelerators based on memristive devices can deliver higher energy efficiencies and data throughputs when compared with conventional architectures. In the vast multitude of memristive devices, bipolar resistive switches (BRS) based on the valence change mechanism (VCM) are particularly interesting due to their low power operation, non-volatility, high integration density and their CMOS compatibility. While a wide range of possible applications is considered, many of them such as artificial neural networks heavily rely on Vector-Matrix-Multiplications (VMMs) as a mathematical operation. These VMMs are made up of large numbers of Multiplication and Accumulation (MAC) operations. The MAC operation can be realised using memristive devices in an analog fashion using Ohm's law and Kirchhoff's law. However, VCM devices exhibit a range of non-idealities, affecting the VMM performance, which in turn impacts the overall accuracy of the application. Those non-idealities can be classified into time-independent (programming variability) and timedependent (read disturb and read noise). Additionally, peripheral circuits such as Analog to Digital Converters (ADCs) can introduce errors during the digitalization. In this work, we experimentally and theoretically investigate the impact of deviceand circuit-level effects on the VMM in a VCM crossbars. Our analysis shows that the variability of the Low Resistive State (LRS) plays a key role and that reading in the RESET direction should be favored to reading in the SET direction.

Unary Coding and Variation-Aware Optimal Mapping Scheme for Reliable ReRAM-Based Neuromorphic Computing.

Go Unary: A Novel Synapse Coding And Mapping Scheme For Reliable Reram-Based Neuromorphic Computing

Nonlinear Quantization for In-Sram Multi-Bit MAC Design

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Learning the Sparsity for ReRAM

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Learning the sparsity for ReRAM - mapping and pruning sparse neural network for ReRAM based accelerator.

Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

Device and circuit optimization of RRAM for neuromorphic computing

Hardware Implementation Of Rram Based Binarized Neural Networks

Intra-array Non-Idealities Modeling and Algorithm Optimization for RRAM-based Computing-in-Memory Applications

Improving DNN Fault Tolerance Using Weight Pruning and Differential Crossbar Mapping for ReRAM-based Edge AI

Multicore Spiking Neuromorphic Chip in 180-nm with ReRAM Synapses and Digital Neurons

An Improved RRAM-Based Binarized Neural Network with High Variation-Tolerated Forward/Backward Propagation Module

Reliability aspects of binary vector-matrix-multiplications using ReRAM devices

33.1 A 74 TMACS/W CMOS-RRAM Neurosynaptic Core with Dynamically Reconfigurable Dataflow and In-situ Transposable Weights for Probabilistic Graphical Models.

Crossbar-Constrained Technology Mapping for ReRAM Based In-Memory Computing

A Parallel Multibit Programing Scheme with High Precision for RRAM-Based Neuromorphic Systems

Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System