Abstract:Visible light opto-electronic systems with synaptic characteristics have outstanding potential for a wide range of applications from photonic computing to the emulation of the basic functionalities of human visual systems. However, the complexities of photonic memristors and opto-synaptic devices are far beyond the concept of conventional image sensor technology. The development of artificial smart recognition systems requires an integrated complex network of image sensors and memory and processing units, which unfavorably consume a higher amount of electrical energy compared to their natural rival, i.e. the human visionary system. Here, we developed a single-unit photonic memristor for efficient visible light reception with non-volatile opto-resistive switching characteristics. The heterointerface engineering at the plasmonic unit based on heterostructured oxide films enabled the development of a visible-light tunable opto-synaptic device. The N-2 incorporation into an atomically-thin In2O3 film at Au/In2O3-TiO2 heterointerfaces ensured the considerable decrease of opto-resistive switching current and enabled synergistic improvement of the long-term plasticity (LTP) of optical synapses. The relaxation time of opto-synapses was controlled by altering the polarization of the Au/In2O3 electrode, ensuring the synergistic improvement of LTP by the increase of photoconductance of the opto-synaptic device. The proof-of-concept of LTP for visible light plasmonic synapses can significantly simplify the circuitry of future artificial visionary systems and contribute to the outstanding development of neuro-optoelectronic technology.

Heterostructured Plasmonic Memristors With Tunable Opto-Synaptic Functionalities

Plasmonic Optoelectronic Memristor Enabling Fully Light‐Modulated Synaptic Plasticity for Neuromorphic Vision

Optoelectronic synapses based on hot-electron-induced chemical processes.

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Multicolor Fully Light-Modulated Artificial Synapse Based on P-MoSe2/PxOy Heterostructured Memristor.

N:ZnO/MoS 2 -Heterostructured Flexible Synaptic Devices Enabling Optoelectronic Co-Modulation for Robust Artificial Visual Systems

Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials

Fully light-modulated memristor based on ZnO/MoOx heterojunction for neuromorphic computing

Multifunctional Optoelectronic Memristor Based on CeO2/MoS2 Heterojunction for Advanced Artificial Synapses and Bionic Visual System with Nociceptive Sensing

Phosphorene Nano-Heterostructure Based Memristors with Broadband Response Synaptic Plasticity

An Artificial Optoelectronic Synapse Based on MoOxfilm.

Multicolor Fully Light-Modulated Artificial Synapse Based on P-MoSe 2 /P x O y Heterostructured Memristor

N:ZnO/MoS2-heterostructured flexible synaptic devices enabling optoelectronic co-modulation for robust artificial visual systems

Optogenetics-inspired manipulation of synaptic memory using all-optically controlled memristors

Multilevel nonvolatile optoelectronic memory based on memristive plasmonic tunnel junctions

MoS2/ZnO-heterostructured Optoelectronic Synapse for Multiwavelength Optical Information-based Sensing, Memory, and Processing

MoS 2 /ZnO-heterostructured Optoelectronic Synapse for Multiwavelength Optical Information-based Sensing, Memory, and Processing

Optogenetics‐Inspired Neuromorphic Optoelectronic Synaptic Transistors with Optically Modulated Plasticity

Optoelectronic Synaptic Memtransistor Based on 2D SnSe/MoS2 Van Der Waals Heterostructure under UV–Ozone Treatment

Plasmonically engineered light-matter interactions in Au-nanoparticle/MoS2 heterostructures for artificial optoelectronic synapse

Multi-modulated optoelectronic memristor based on Ga2O3/MoS2 heterojunction for bionic synapses and artificial visual system