Abstract:Process variations and device aging impose profound challenges for circuit designers. Without a precise understanding of the impact of variations on the delay of circuit paths, guardbands, which keep timing violations at bay, cannot be correctly estimated. This problem is exacerbated for advanced technology nodes, where transistor dimensions reach atomic levels and established margins are severely constrained. Hence, traditional worst-case analysis becomes impractical, resulting in intolerable performance overheads. Contrarily, process-variation/aging-aware static timing analysis (STA) equips designers with accurate statistical delay distributions. Timing guardbands that are small, yet sufficient, can then be effectively estimated. However, such analysis is costly as it requires intensive Monte-Carlo simulations. Further, it necessitates access to confidential physics-based aging models to generate the standard-cell libraries required for STA. In this work, we employ graph neural networks (GNNs) to accurately estimate the impact of process variations and device aging on the delay of any path within a circuit. Our proposed GNN4REL framework empowers designers to perform rapid and accurate reliability estimations without accessing transistor models, standard-cell libraries, or even STA; these components are all incorporated into the GNN model via training by the foundry. Specifically, GNN4REL is trained on a FinFET technology model that is calibrated against industrial 14nm measurement data. Through our extensive experiments on EPFL and ITC-99 benchmarks, as well as RISC-V processors, we successfully estimate delay degradations of all paths -- notably within seconds -- with a mean absolute error down to 0.01 percentage points.

Analog IC Aging-induced Degradation Estimation Via Heterogeneous Graph Convolutional Networks

Deep H-GCN: Fast Analog IC Aging-Induced Degradation Estimation

GNN4REL: Graph Neural Networks for Predicting Circuit Reliability Degradation

GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: from the Time-Zero to the Aging States.

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

Novel Critical Gate-Based Circuit Path-Level NBTI-Aware Aging Circuit Degradation Prediction.

Wages: The Worst Transistor Aging Analysis for Large-scale Analog Integrated Circuits via Domain Generalization

Multi-View Graph Learning for Path-Level Aging-Aware Timing Prediction

Compact Modeling and Simulation of Accelerated Circuit Aging

Concurrent device/circuit aging for general reliability simulations

A Neural Network Based Fast Parameter Extraction of Compact Hot Carrier Degradation Model in FinFETs

A Neural Network Approach for Parameterizations of Hot Carrier Degradation Models

Modeling and Predicting Transistor Aging under Workload Dependency using Machine Learning

Aging-Aware Gate-Level Modeling for Circuit Reliability Analysis

Adaptive Multioutput Gradient RBF Tracker for Nonlinear and Nonstationary Regression

Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications

Towards Reliability-Aware Circuit Design in Nanoscale FinFET Technology: — New-generation Aging Model and Circuit Reliability Simulator

On-Chip Concurrent Device Aging Prognosis and Dielectric Failure Detection for GaN Power Devices

Electromigration Analysis for Interconnects Using Improved Graph Convolutional Network with Edge Feature Aggregation

Deep Neural Networks-Based Direct-Current Operation Prediction and Circuit Migration Design

A Machine Learning Based Reliability Analysis of Negative Bias Temperature Instability (NBTI) Compliant Design for Ultra Large Scale Digital Integrated Circuit