Abstract:Narrow-linewidth lasers have a high spectral purity, long coherent length, and low phase noise, so they have important applications in atomic clocks, precision measurement, and quantum computing. We inject a transmitted laser from a narrow-linewidth (∼15 kHz) flat-concave Fabry–Perot (F-P) cavity made from ultra-low expansion (ULE) optical glass into an 852 nm distributed Bragg reflector-type laser diode (DBR-LD), of which the comprehensive linewidth is 1.67 MHz for the free running case. With an increase in the self-injection power, the laser linewidth gradually narrows, and the injection locking current range gradually increases. The narrowest linewidth measured by the delayed frequency-shifted self-heterodyne (DFSSH) method is about 365 Hz, which is about 1/4500 of the linewidth for the free running case. Moreover, to characterize the laser phase noise, we use a detuned F-P cavity to measure the conversion signal from the laser phase noise to the intensity noise for both the free running case and the self-injection lock case. The laser phase noise for the self-injection lock case is significantly suppressed in the analysis frequency range of 0.1–10 MHz compared to the free running case. In particular, the phase noise is suppressed by more than 30 dB at an analysis frequency of 100 kHz.

Reduced Relative Intensity Noise of Integrated DFB Laser Array under Injection Locking

Coherently Combined DFB Laser Array Chip with Reduced Relative Intensity Noise

Reduced Relative Intensity Noise of a Coherently Combined Single-Mode Semiconductor Laser Array under Injection Locking

Relative Intensity Noise Characteristics of Single-mode Laser Array under Injection Locking

Suppression of Relative Intensity Noise in Mutually Injection Locked Dfb Laser Diodes

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Novel Linewidth Narrowing Scheme of Dfb Lasers Based on Integrated Mutual Injection Locking

Reduction of the Linewidth of a Diode Laser by Locking to a High-Finesse Fabry–Perot Cavity

Linewidth Compression of DFB Laser with a High Ratio Based on SIL and PDH

Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes under Mutual Injection Locking

Minimizing Noise in Distributed Reflector Laser Types Under Optical Injection Locking

Improved Noise Characteristics of Mutually Injection Locked Semiconductor Lasers in a Weak Coupling Regime

Simultaneous Linewidth Narrowing for Integrated Chip of DFB Laser Array Based on Self-Injection Feedback

Frequency Noise Performance Improvement of Mutually Injection-Locked Semiconductor Lasers

Narrow-linewidth 852-nm DBR-LD with self-injection lock based on high-fineness optical cavity filtering

Narrow-Linewidth 852-Nm DBR-LD with Self-Injection Lock Based on High-Finesse Optical Cavity Filtering

Modulation Properties Enhancement in a Monolithic Integrated Two-Section DFB Laser Utilizing Side-Mode Injection Locking Method.

Four-Channel 1.55-Mu M Dfb Laser Array Monolithically Integrated With A 4x1 Multimode-Interference Combiner Based On Nanoimprint Lithography

Experimental Research on the Integrated Optical Injection-Locked DFB Laser Fabricated by the Reconstruction Equivalent Chirp Technique

Frequency Instability of DFB Lasers with Y-Branch Coupler in Photonic Integrated Device

Linewidth Narrowing Of Mutually Injection Locked Semiconductor Lasers With Short And Long Delay