Abstract:In this paper, the effect of the raw particle size and the annealing process on the compositions, microstructure, mechanical, thermal, and electrical properties of ZnO varistors was investigated using X-ray diffraction, infrared, X-ray photoelectron spectroscopy, scanning electron microscopy, electric field–current density, capacitance–voltage, mechanical, and thermal expansion measurements. Furthermore, the ZnO grain growth mechanism during the annealing process was discussed in detail. Results show that when the raw particle size equaled 90 nm and sintering was performed at 1100 °C for 2 h, the obtained ZnO-based varistors possessed excellent mechanical, thermal, and electrical properties; the E1mA, α, JL, and K values were 1015.3 V mm–1, 37.98, 2.45 μA cm–2, and 1.37, respectively, due to the highest bulk density and the finest uniform particle size distribution. When annealing occurred at 300 °C for three times, values of σf, KIC, E1mA, α, JL, and K reached 175.35 MPa, 1.96 MPa m1/2, 1180.2 V mm–1, 43.58, 2.15 μA cm–2, and 1.2, indicating improvements of approximately 14.7%, 4%, 16.2%, 14.7%, − 12.2%, and 11.11% compared with those of the non-annealed ZnO-based varistors, respectively, being due to the improved uniformity of grain size distribution and the re-distribution of donor Al3+ and Y3+ in the ZnO crystal and grain boundary. The annealing process lead to the transformation of Sb3+ to Sb5+ in the ZnO crystal, which could generate two additional coordination sites. The newly generated sites could combine with O2- in other crystals to increase the grain growth, resulting in clear grain growth on the surface, improved grain size distribution, and regular grain shape in the interior of ZnO-based varistors.

The Effect of Point Defects on DC Degradation of ZnO Varistors

DC Aging Mechanism of Co2O3-Doped ZnO Varistors

Electrical Degradation of Double-Schottky Barrier in ZnO Varistors

Non-monotonically Changes in Double Schottky Barrier of MnCO3-doped ZnO Varistors During DC Aging

Research progress of degradation mechanism of ZnO varistors

Simultaneously enhanced electrical stability and nonlinearity in ZnO varistor ceramics: Role of Si-stabilized δ-Bi2O3 phase

Aging Characteristics and Mechanisms of ZnO Nonlinear Varistors

Steadily Decreasing Power Loss of a Double Schottky Barrier Originating from the Dynamics of Mobile Ions with Stable Interface States

Effects of radius and electronegativity of donors on the microstructure and mechanical, thermal, and electrical properties of ZnO varistors

Improving Age Stability and Energy Absorption Capabilities of Zno Varistors Ceramics

Effect of Sc2O3 doping on microstructure and electrical properties of ZnO–Bi2O3-based varistors

The AC aging characteristics of high voltage gradient ZnO varistors doped with different content of Bi 2O 3

Transient conduction of ZnO varistors under moderate time-varying voltages: Dynamics of interfacial charges of the double Schottky barrier

Breakdown Phenomenon of ZnO Varistors Caused by Non-Uniform Distribution of Internal Pores

AC ageing characteristics of Y2O3-doped ZnO varistors with high voltage gradient

Effect of B2O3 doping on the microstructure and electrical properties of ZnO-based varistors

Effect of Bi 2O 3 doping on the electrical characteristics of Al-doped ZnO varistors with low residual voltage

Effects of raw particle size and annealing on microstructure, electrical and mechanical behaviors of ZnO-based varistors

Influence of Dopants on Electrical Properties of ZnO-V 2 O 5 Varistors Deduced from AC Impedance and Variable-Temperature Dielectric Spectroscopy

Improved Direct-Current Aging Stability and Suppressed Leakage Current of Zinc Oxide Varistors by Co-doping with Boron, Gallium, and Yttrium