Abstract:High-pressure experiments are crucial in modern interdisciplinary research fields such as engineering quantum materials, yet local probing techniques remain restricted due to the tight confinement of the pressure chamber in certain pressure devices. Recently, the negatively charged nitrogen-vacancy (N- V ) center has emerged as a robust and versatile quantum sensor in pressurized environments. There are two popular ways to implement N- V sensing in a diamond anvil cell (DAC), which is a conventional workhorse in the high-pressure community: create implanted N- V centers (IN- Vs ) at the diamond anvil tip or immerse N- V -enriched nanodiamonds (NDs) in the pressure medium. Nonetheless, there are limited studies on comparing the local stress environments experienced by these sensor types as well as their performances as pressure gauges. In this work, by probing the N- V energy levels with the optically detected magnetic resonance (ODMR) method, we experimentally reveal a dramatic difference in the partially reconstructed stress tensors of IN- Vs and NDs incorporated in the same DAC. Our measurement results agree with computational simulations, concluding that IN- Vs perceive a more nonhydrostatic environment dominated by a uniaxial stress along the DAC axis. This provides insights on the suitable choice of N- V sensors for specific purposes and the stress distribution in a DAC. We further propose some possible methods, such as using NDs and diamond nanopillars, to extend the maximum working pressure of quantum sensing based on ODMR spectroscopy, since the maximum working pressure could be restricted by nonhydrostaticity of the pressure environment. Moreover, we explore more sensing applications of the N- V center by studying how pressure modifies different aspects of the N- V system. We perform a PL study using both IN- Vs and NDs to determine the pressure dependence of the zero-phonon line, which helps developing an all-optical pressure sensing protocol with the N- V center. We also characterize the spin-lattice relaxation ( T1 ) time of IN- Vs under pressure to lay a foundation for robust pulsed measurements with N- V centers in pressurized environments. https://doi.org/10.1103/PhysRevApplied.19.044091 © 2023 American Physical Society

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