Abstract:Mo disulfide overlayers with the thickness exceeding 1.77 nm were obtained on Si substrates through mechanical exfoliation. The resulting Mo disulfide flakes were then analyzed ex situ using combination of Auger electron spectroscopy (AES), elastic-peak electron spectroscopy (EPES) and scanning electron microscopy (SEM) in order to characterize their surface chemical composition, electron transport phenomena and surface morphology. Prior to EPES measurements, the Mo disulfide surface was sputter-cleaned and amorphized by 3 kV argon ions, and the resulting S/Mo atomic ratio varied in the range 1.80–1.88, as found from AES measurements. The SEM images revealed single crystalline small-area (up to 15 μm in lateral size) Mo disulfide flakes having polygonal or near-triangular shapes. Such irregular-edged flakes exhibited high crystal quality and thickness uniformity. The inelastic mean free path (IMFP), characterizing electron transport, was evaluated from the relative EPES using Au reference material for electron energies E = 0.5–2 keV. Experimental IMFPs, λ, determined for the AES-measured surface compositions were approximated by the simple function λ = kEp, where k = 0.0289 and p = 0.946 were fitted parameters. Additionally, these IMFPs were compared with IMFPs resulting from the two methods: (i) present calculations based on the formalism of the Oswald et al. model; (ii) the predictive equation of Tanuma et al. (TPP-2M) for the measured Mo0.293S0.551C0.156 surface composition (S/Mo = 1.88), and also for stoichiometric MoS2 composition. The fitted function was found to be reasonably consistent with the measured, calculated and predicted IMFPs. We concluded that the measured IMFP value at 0.5 keV was only slightly affected by residual carbon contamination at the Mo disulfide surface.

Interlayer Binding Energy of Hexagonal MoS2 As Determined by an in Situ Peeling-to-Fracture Method

First-Principles Study of Electronic and Elastic Properties of Hexagonal Layered Crystal MoS2 Under Pressure

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

First-principles Study of the Phonon Vibrational Spectra and Thermal Properties of Hexagonal MoS2

Interlayer Coupling Affected Structural Stability in Ultrathin MoS2: an Investigation by High Pressure Raman Spectroscopy

Adhesion Energy of MoS2 Thin Films on Silicon-Based Substrates Determined Via the Attributes of a Single MoS2 Wrinkle.

Delamination of MoS2/SiO2 Interfaces under Nanoindentation.

In Situ Nanomechanical Characterization of Multi-Layer MoS2 Membranes: from Intraplanar to Interplanar Fracture.

Surface Characterization of MoS2 Atomic Layers Mechanically Exfoliated on a Si Substrate

Interfacial Thermal Conductance Between Few to Tens of Layered-Mos2 and C-Si: Effect of MoS2 Thickness

Unraveling the interlayer and intralayer coupling in two-dimensional layered MoS$_2$ by X-ray absorption spectroscopy and ab initio molecular dynamics simulations

Determining the Interlayer Shearing in Twisted Bilayer MoS2 by Nanoindentation

Revisiting the Buckling Metrology Method to Determine the Young's Modulus of 2D Materials

Atomistic measurement and modeling of intrinsic fracture toughness of two-dimensional materials

Mapping the elastic properties of two-dimensional MoS2 via bimodal atomic force microscopy and finite element simulation

Interlayer Binding Energy of Graphite: A Mesoscopic Determination from Deformation

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Probing quantum confinement effects on the excitonic property and electronic band structures of MoS<sub>2</sub>

Optical quantification of the weak van der Waals coupling between multilayer antimonene and bilayer MoS2 using ultrafast coherent vibration spectroscopy

Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures