Diode-like Rectification Characteristics of BiFeO3-based/Zn1-xNixFe2O4 Bilayered Films for Application of Ferroelectric Field Effect Transistors

Guoqiang Tan,Xixi Ren,Yun Liu,Meiyou Guo,Long Lv,Jincheng Li,Mintao Xue,Huijun Ren,Ao Xia,Wenlong Liu
DOI: https://doi.org/10.1016/j.jallcom.2020.156818
IF: 6.2
2021-01-01
Journal of Alloys and Compounds
Abstract:The microscopic strain caused by lattice mismatch show great differences in the Bi0.89Ho0.08Sr0.03-Fe0.95Mn0.03Zn0.02O3/Zn1-xNixFe2O4 (BHSFMZO/ZN(x)FO) bilayered films prepared by chemical solution deposition, which affects the state between the interfaces. The p-n heterojunction is formed between the BHSFMZO and ZN(x)FO layers of the BHSFMZO/ZN(x)FO (x <= 0.3) bilayered films. And its leakage current shows obvious diode-like rectifying I-E characteristic and the ferroelectric properties show hysteresis. BHSFMZO/ZN(x)FO (x <= 0.3) bilayered films prepared by chemical solution deposition may be helpful to suppress the charge injection from semiconductor to ferroelectric thin film in ferroelectric field effect transistor and may have potential applications in self-rectified resistive random access memory due to their excellent resistance switching behaviors. (C) 2020 Elsevier B.V. All rights reserved.
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