Sensitivity of 4D-STEM to Valence Electron Distribution Based on Multipole Density Formalism

Lijun Wu,Qingping Meng,Yimei Zhu
DOI: https://doi.org/10.1017/s1431927620013148
IF: 4.0991
2020-01-01
Microscopy and Microanalysis
Abstract:Valence electrons are electrons involved in chemical bonding that determine a material’s functionality. The ability to accurately measure valence electron distribution is at the heart of condensed matter and materials science research. Measurement of charge density is traditionally performed using single-crystal x-ray diffraction (SCXRD), or combination of SCXRD and quantitative convergent-beam electron diffraction (QCBED), which usually requires high quality large single crystals [1]. Recent advancement in detector technology opened a door for 4D-STEM, which yields a diffraction pattern for each scanning position. It has been demonstrated that 4D-STEM can be used to measure the charge density of 2D materials with atomic resolution [2]. However, the measurement is based on center-of-mass (COM) and only valid for extremely thin samples. Moreover, it only measures the projected total charge density rather than the electrons that bond the atoms together. Here, we demonstrate that the 4D-STEM is sensitive to the valence electron distribution based on simulations, thus can be used to map aspherical valence-electron distribution in quantum materials. The electron density of a crystal can be modeled based on atom-centered multipole density functions (MDF) with the electron density of the atom as [3]: Here ρ core and ρ val are the spherical atomic core and spherical valence electron density, P c and P v are the electron population of core and valence component, κ is a parameter describing expansion ( κ < 1) or contraction ( κ >1) of the valence shell. The third term is the multipole contribution, representing aspherical distribution of valence electrons. R L (r) is the radial
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