Abstract:We demonstrate, for the first time, the fabrication of vertically stacked SiGe nanowire (NW) arrays with a fully CMOS compatible technique. Our method uses the phenomenon of Ge condensation onto Si and the faster oxidation rate of SiGe than Si to realize the vertical stacking of NWs. Gate-all-around n- and p-FETs, fabricated using these stacked NW arrays as the channel (Lg ≥ 0.35 µm), exhibit excellent device performance with high ION/IOFF ratio (∼ 10 6 ), near ideal subthreshold slope (∼62-75 mV/dec) and low drain induced barrier-lowering (∼20 mV/V). The transconductance characteristics suggest quan- tum confinement of holes in the (Ge)-rich outer-surface of SiGe for p-FETs and confinement of electrons in the core Si with signifi- cantly less (Ge) for n-FETs. The presented device architecture can be a promising option to overcome the low drive current restriction of Si NW MOSFETs for a given planar estate. tip (10) to arrange wires for achieving specific functional- ity. These processes lack control in precision, repeatability, and scalability, and, as of now, are far from being able to build 3-D NW stacks in an orderly manner. On the other hand, standard CMOS techniques have demonstrated the fab- rication of multibridge Si channels, using SiGe as sacrificial layers (10)-(13). In this letter, we present a novel method of fabricating vertically stacked lithographically defined lateral SiGe NWs. The width and thickness of NWs are around 20-30 nm with up to four levels stacked vertically on top of each other. Our method is based on the higher oxidation rate of SiGe than Si and with Ge condensation into Si (14). GAA n- and p-FETs are fab- ricated with gate lengths down to 0.35 µm using these 3-D SiGe NW stacks as the channel body. The fabricated devices show excellent device characteristics for both n- and p-MOS devices.

Key Process Technologies for Stacked Double Si0.7Ge0.3 Channel Nanowires Fabrication

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Study of selective isotropic etching Si1−xGex in process of nanowire transistors

Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Ultra-Confined Catalytic Growth Integration of Sub-10 Nm 3D Stacked Silicon Nanowires Via a Self-Delimited Droplet Formation Strategy.

Vertically Stacked SiGe Nanowire Array Channel

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Facile 3D Integration of Si Nanowires on Bosch-etched Sidewalls for Stacked Channel Transistors

Optimization of Bosch Etch Process for Vertically Stacked Si Nanowires

A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.

Fabrication of Vertically Stacked Single-Crystalline Si Nanowires Using Self-Limiting Oxidation

3D Sidewall Integration of Ultrahigh‐Density Silicon Nanowires for Stacked Channel Electronics

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors

Study of SiGe Selective Epitaxial Process Integration with High-K and Metal Gate for 16/14 Nm Nodes FinFET Technology

Electric Double Layer Effect in a Nano-Scale SiO2sacrificial Layer Etching Process and Its Application in Nanowire Fabrication

Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves

Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM