Abstract:Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures. Among these compounds, InAs/GaSb type II superlattices represents the most commonly studied materials. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. InAs/GaSb superlattices is a type II disconnected band structure with electrons and holes confined in the InAs and GaSb layers, respectively. The electron micro-band and hole micro-band can be regulated separately by adjusting the InAs and GaSb layers, which facilitates the design of superlattice structures and maximizes the amount of energy band offset. These works constituted a theoretical basis for the effective utilization of the InAs/GaSb system in material optimization and designing new SL structures; they also provided an opportunity for the preparation and rapid development of InAs/GaSb T2SLs. In this paper, we systematically review several widely used methods for simulating superlattice band structures, including the kp perturbation method, envelope function approximation, empirical pseudopotential method, empirical tight-binding method, and first-principles calculations. With the limitations of different theoretical methods proposed, the simulation methods have been modified and developed to obtain reliable InAs/GaSb SL energy band calculation results. The objective of this work is to provide a reference for designing InAs/GaSb type II superlattice band structures.

Interband Impact Ionization in THz-driven InAs/AlSb Heterostructures

Balance-equation Approach to Impact Ionization Induced by an Intense Terahertz Radiation: Application to InAs/AlSb Heterojunctions

Multiphoton-Assisted Absorption of Terahertz Radiation in Inas/Alsb Heterojunctions

Absorption Of Intense Terahertz Radiation In Inas/Alsb Heterojunctions

The Effect of an Intense Terahertz Irradiation on Electron Transport in Two-Dimensional Semiconductors

Investigation of impact ionization using the balance-equation approach for multivalley nonparabolic semiconductors

The Effect of an Intense Terahertz Irradiation on Magneto-Miniband Transport in Semiconductor Superlattices

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

Impact ionization in low-band-gap semiconductors driven by ultrafast THz excitation: beyond the ballistic regime

Effect of external electric field on the electronic properties of AlAs/SiC van der Waals heterostructure

Electric Field and Uniaxial Strain Tunable Electronic Properties of the InSb/InSe Heterostructure.

THE REALIZATION OF TERAHERTZ BANDGAP FROM InAs / GaSb TYPE II SUPERLATTICES

Band Hybridization and Spin-Splitting in Inas/Alsb/Gasb Type Ii and Broken-Gap Quantum Wells

Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures

Balance Equations for Electron Transport in an Arbitrary Energy Band Driven by an Intense Terahertz Field. Application to Superlattice Miniband Transport

Nonlinear Transport in Quasi-Two-Dimensional Systems Driven by Intense Terahertz Fields

Current Resonances and Current Platforms in a Two-Level InAs Quantum Dot with Asymmetric Terahertz Irradiations

Simulation of the band structure of InAs/GaSb type II superlattices utilizing multiple energy band theories

Strong Terahertz Absorption in Long-Period InAs / GaSb Type-Ii Superlattices with Inverted Band Structures

Terahertz Spectra Emitted from Hot Carriers in Two-Dimensional Semiconductors

Nonparabolic Multivalley Balance-Equation Approach to Impact Ionization: Application to Wurtzite GaN