Abstract:Two-dimensional (2D) anisotropic semiconductors, such as black phosphorene, show strong potential in ultrascaled metal-oxide-semiconductor field-effect transistors (MOSFETs) as the anisotropic electronic structure is highly beneficial in boosting the device performance at sub-10-nm gate length regime. Metallic graphenelike borophene can be halogenated to form a stable monolayer family of B4X4 ( X = F,Cl,andBr ) whose highly anisotropic semiconducting electronic structures suggest a potential in ultrascaled MOSFET applications. Here, we computationally explore the quantum transport properties of B4X4 monolayers as high-performance (HP) 5-nm MOSFETs. The HP on -state current of the n -type 5-nm monolayer B4X4 MOSFETs can reach over 3000 μA/μm at 5-nm gate length regime, thus fulfilling the ITRS requirement of HP devices. Of note, by analyzing the physical relationship between the anisotropic electronic structures (transport effective mass m// and density of states mDOS ), we show that large electronic anisotropy does not immediately guarantee high performance. An overly large m// or mDOS would suppress the saturation current and lead to limited HP on -state current of monolayer B4X4 , thus revealing a balance between the effective masses is needed when designing 2D semiconductor MOSFETs. This work provides insights and design guidelines for the development of next-generation nanoelectronic devices based on the exceptional transport properties of 2D anisotropic channel materials. https://doi.org/10.1103/PhysRevApplied.21.054016 © 2024 American Physical Society

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