Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Strain Effects on the 2D Van Der Waals Heterostructure C3B/C3N: A Density Functional Theory and a Tight‐Binding Study

Effects of Strain on Electronic and Optic Properties of Holey Two-Dimensional C2N Crystals

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Tuning the Electronic Structure of GeC/WS2 Van Der Waals Heterostructure by Electric Field and Strain: A First Principles Study

Strain Engineering of Magneto-optical Properties in C$_3$B/C$_3$N van der Waals Heterostructure

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Strain and electric field tunable electronic and optical properties in antimonene/C3N van der Waals heterostructure

Theoretical Exploration of the Structural, Electronic and Optical Properties of G-C3n4/c3n Heterostructures.

Tunable Electronic Structure and Magnetic Properties of Two-Dimensional G-C3n4/cr2ge2te6 Van Der Waals Heterostructures

Tunable Electronic Properties of GeC/BAs Van Der Waals Heterostructure under External Electric Field and Strain

X3N (X=C and Si) Monolayers and Their Van Der Waals Heterostructures with Graphene and H-Bn: Emerging Tunable Electronic Structures by Strain Engineering

Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Strain and electric field tuning the electronic properties of two-dimensional MoS2/ScCl3 van der Waals heterostructure

Strain Effect on the Structural and Electronic Properties of a Monolayer C 4 N 4

Strain and electric field co-modulation of electronic properties of bilayer boronitrene.

Effects of Electric Field and Strain on the Schottky Barrier of the Bilayer Van Der Waals Heterostructures of Graphene and Pure/hydrogenated PC3 Monolayer

Efficient Band Structure Modulations in Two-Dimensional MnPSe3/CrSiTe3 Van Der Waals Heterostructures

Strain effects on the interfacial thermal conductance of graphene/h-BN heterostructure

Tunable Electronic Properties of Two-Dimensional Type-I 1T-Sn2/hbn and Type-Ii 1T-Xn2/hbn (X = Se, Te) Van Der Waals Heterostructures from First-Principle Study

Strain Tunable Band Structure of a New 2D Carbon Allotrope C568