X3N (X=C and Si) Monolayers and Their Van Der Waals Heterostructures with Graphene and H-Bn: Emerging Tunable Electronic Structures by Strain Engineering

Jun Zhao,Hui Zeng,Xingfei Zhou

DOI: https://doi.org/10.1016/j.carbon.2018.12.109

IF: 10.9

2019-01-01

Carbon

Abstract:Using density functional theory, we explore the electronic structures of the two-dimensional (2D) C3N and Si3N, as well as C3N-based van der Waals heterostructures with graphene and h-BN. The two-dimensional (2D) C3N is demonstrated to be an indirect semiconductor with atomically flat nanostructure, while the 2D buckled Si3N exhibits metallic property. The semiconductor-metal transition can be obtained under compressive strain of −8% and tensile strain of 14% for the 2D C3N, and the metal-semiconductor transition can be achieved when 10% stretch strain is applied for the Si3N. Moreover, the C3NBN heterojunctions with three different stackings are energetically favorable based on the formation energy analysis. The Dirac-like point of C3N is broken as the interlayer distance is decreased, and the band alignments of the C3NBN heterojunctions are significantly affected by the external strains. In contrast, both AA- and AB-stacked C3N-graphene heterojunctions possess excellent Ohmic contact. The p-type Ohmic contact of the AA stacking can be switched to the n-type provided that the vertical distance is substantially decreased. The tunable electronic properties of the 2D C3N and the comprehensive understanding of C3N-based van der Waals heterostructures influenced by strain engineering may facilitate their practical applications for nanoelectronics and optoelectronics.