Abstract:In this study, we conducted research on manufacturing molybdenum (Mo) thin films by a thermal atomic layer deposition method using solid MoO2Cl2 as a precursor. Mo thin films are widely used as gate electrodes and electrodes in metal-oxide semiconductor field-effect transistors. Tungsten (W) has primarily been used as a conventional gate electrode, but it suffers from reduced resistivity due to the residual fluorine component generated from the deposition process. Thus, herein, we developed a Mo thin film with low resistivity that can substitute W. The MoO2Cl2 precursor used to deposit the Mo thin film exists in a solid state. For solid precursors, the vapor pressure does not remain constant compared to that of liquid precursors, thereby making it difficult to set process conditions. Furthermore, the use of solid precursors at temperatures 600 °C and above has many limitations. Herein, H2 was used as the reactive gas for the deposition of Mo thin films, and the deposition temperature was increased to 650 °C, which was the maximum processing temperature of the aluminum nitride heater. Additionally, deposition rate, resistivity change, and surface morphology characteristics were compared. While resistivity decreased to 12.9 μΩ∙cm with the increase of deposition temperature from 600 °C to 650 °C, surface roughness (Rq) was increased to 0.560 nm with step coverage of 97%. X-ray diffraction analysis confirmed the crystallization change in the Mo thin film with increasing process temperature, and a certain thickness of the seed layer was required for nucleation on the initial wafer of the Mo thin film. Thus, the molybdenum nitride thin film was deposited after the 4 nm deposition of Mo thin film. This study confirmed that crystallinity of Mo thin films must be increased to reduce their resistivity and that a seed layer for initial nucleation is required.

Electrodeposition of Molybdenum in the [BMP]Tf2N Ionic Liquid at Low Temperature

One-Step Reductive Electrodeposition of MOF Film on Polymer Membrane

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

A Study of Molybdenum Coatings Underpotential Preparation in an Ionic Liquid System

Electrodeposition of Molybdenum from Water-in-Acetate Electrolytes

Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor

Electrochemical behavior and cathodic nucleation mechanism of molybdenum ions in NaCl-KCl

Electrodeposition of Tin from Ambient-Temperature Molten Salt Electrolyte and Ionic Species in the Electrolyte

Liquid zinc assisted electro-extraction of molybdenum

Electrodeposition of Nb-Sn Alloy from Sncl2-Nbcl5-Emic Ambient Temperature Molten Salts

Effect of Reaction Temperature on the Molten Salt Electrodeposition of Silicide Coating on Molybdenum Substrate and its Oxidation Behavior

Voltammetric Behaviour and Electrodeposition of Samarium in 1-Butyl-1-methylpyrrolidinium Bis(trifluoromethylsulfonyl)imide Ionic Liquid

Electrodeposition of Titanium Aluminide (TiAl) Alloy from AlCl3–BMIC Ionic Liquid at Low Temperature

Modulation of MoS2@Ti electrode structure to improve electrode stability and enhance the efficiency of electrochemical reduction oxidized mercury

Preparation of Γ-Uranium-molybdenum Alloys by Electrochemical Reduction of Solid Oxides in LiCl Molten Salt

Liquid-Metal-Assisted Deposition and Patterning of Molybdenum Dioxide at Low Temperature

Hydrothermal Synthesis of MoO3 Nanobelts and Their Electrochemical Characterization

Stability Investigation of TiB2 Coatings in Molten Zinc Fabricated by Electrophoretic Deposition in Molten Salts

Electrochemical Behavior of Cobalt from 1-Butyl-3-methylimidazolium Tetrafluoroborate Ionic Liquid

Low-temperature synthesis of uniform monolayer molybdenum disulfide films

Electrodeposition of Molybdenum Disulfide (MoS2) Nanoparticles on Monocrystalline Silicon