Tuning the Morphology and Composition of Ultrathin Cobalt Oxide Films Via Atomic Layer Deposition

Bin Huang,Kun Cao,Xiao Liu,Lihua Qian,Bin Shan,Rong Chen

DOI: https://doi.org/10.1039/c5ra09782g

IF: 4.036

2015-01-01

RSC Advances

Abstract:Composition and morphology controllable cobalt oxide ultrathin film have been fabricated with ALD method on both planar and porous substrate.

What problem does this paper attempt to address?

Atomic Layer Deposition of Co x O y Films: Oxidants versus Composition

Zhixin Wan,Teng Fei Zhang,Zhihao Zeng,Bin Xi

DOI: https://doi.org/10.1002/admi.202200097

IF: 5.4

2022-04-15

Advanced Materials Interfaces

Abstract:Cobalt oxide (CoO and Co3O4) films with good crystallinity are successfully synthesized by atomic layer deposition (ALD) using bis(N,N0‐di‐iso‐propylacetamidinato)cobalt(II) (Co(iPr2‐Me‐AMD)2) and H2O/O3. Both films exhibit smooth surface, good uniformity, and low resistivity. Density functional theory calculations (enthalpy change) demonstrate that the film growth is greatly affected by the oxidability of co‐reactants during the deposition process.Cobalt oxides (CoxOy) have shown great potential for applications in catalysts, sensors, and energy storage fields, and their performance remarkably depends on their oxidation states. Herein, CoxOy films with precisely controlled composition are first introduced by atomic layer deposition (ALD) using bis(N,N0‐di‐iso‐propylacetamidinato)cobalt(II) (Co(iPr2‐Me‐AMD)2) as Co precursor and H2O/O3 as oxidants. The results show that the ALD processes using both oxidants exhibit typical self‐limiting characteristic, where cubic‐CoO films, with growth rate of 0.045 nm per cycle, are obtained at 150–200 °C using H2O oxidant, while cubic‐Co3O4 films, with growth rate of 0.05 nm per cycle, can be deposited at 200–225 °C using O3 oxidant. Both CoO and Co3O4 films show dense, smooth microstructure, and good crystallinity with typical columnar crystal feature, where the Co3O4 film shows smaller columnar size because the O3 promotes rapid nucleation with relatively higher density of nucleation sites. The thermodynamic growth mechanism of ALD process is established via density functional theory calculations, which demonstrates that the exothermic reaction path of O3 is more energetically than that of H2O. Both films possess relatively low resistivity of ≈10−1 Ω cm−1 with p‐type semiconductor behavior, which shows promising application potentials of these films.

materials science, multidisciplinary,chemistry
Self-assembly of a Highly Stable and Active Co3O4/H-TiO2 Bulk Heterojunction with High-Energy Interfacial Structures for Low Temperature CO Catalytic Oxidation

Zehai Xu,Qingchuan Yin,Xiong Li,Qin Meng,Lusheng Xu,Boshen Lv,Guoliang Zhang

DOI: https://doi.org/10.1039/d0cy01477j

IF: 6.177

2020-01-01

Catalysis Science & Technology

Abstract:Development of transition metal oxide catalysts with a tunable structure is extremely important for energy, chemical and environmental processes. Herein, we report a new strategy for the synthesis of a highly stable and active Co3O4/H-TiO2 bulk heterojunction with high-energy interfacial structures through two-step hydrothermal-crystallization for efficient low-temperature CO catalytic oxidation. By selectively etching, an anatase TiO2 support exposing the high-index (112) facet was first created. The high-index (112) facet with high surface energy can endow the bulk TiO2 support with unique physical and chemical properties so as to act as a foundation to construct a robust high-energy interfacial bulk heterojunction. Because of the presence of Ti–O–Co species at the high-energy interface, the prepared Co3O4/H-TiO2 bulk heterojunction possessed much more catalytic active sites compared to Co3O4 nanoparticles supported on conventional TiO2 supports and exhibited a turnover frequency (TOF) value of 3.56 × 10−3 s−1 at 120 °C, which was very competitive compared to those of reported cobalt-based catalysts and 1000 times higher than that of commercial Co3O4. Importantly, due to the strong interactions between Co3O4 and the TiO2 bulk support exposed high-index facet, more attractive water-resisting properties for low temperature CO oxidation can be achieved in the presence of steam (∼2%) compared to previously reported catalysts. The results show promising opportunities for tailoring catalytic behaviors beyond a facile and rational design with a controllable metal–support interface.
Syntheses of Η1-Alkyl-η3-allyl-η5-cyclopentadienyl Cobalt(III) Complexes and Their Use in Low-temperature Atomic Layer Deposition of Cobalt-Containing Thin Films

Ke Lu,Jiahao Zhu,Jialiang Wang,Qingbo Wa,Zheng Guo,Wei Xiong,Yuan Gao,Renbo Lei,Bichu Cheng,Xinwei Wang

DOI: https://doi.org/10.1002/chem.202203656

2023-01-01

Chemistry - A European Journal

Abstract:Herein, we report the design and scalable synthesis of three new Co(III) complexes, which have an unusual hydrocarbon eta(1)-alkyl-eta(3)-allyl-eta(5)-cyclopentadienyl ligation structure, from the reactions of readily available cobalt(II) compound CoCl2(PPh3)(2) and biomass material beta-pinene via C-C bond activation. These Co(III) complexes are air-stable, fairly volatile, and thermally stable, so they are excellent candidates as the metal precursors for the vapor deposition of cobalt-containing thin films. As a demonstration, we show that the Co(III) complex of [(3'-5'-eta,1-sigma)-methylene(2,2,4-trimethyl-4-cyclohexene-1,3-diyl)](eta(5)-methylcyclopentadienyl)Co (i. e. (seco-pinene)(MeCp)Co) is well suited for the atomic layer deposition (ALD) of Co3O4 and CoS2 thin films, and the deposited Co3O4 and CoS2 films are able to conformally cover trench structures with a fairly high aspect ratio of 10 : 1.
Promoted Platinum Catalytic Activity and Thermal Stability with Nano-Scale Cobalt Oxide Coating Via Atomic Layer Deposition

Kun Cao,Bin Huang,Yihang Zhang,Xiao Liu,Bin Shan,Rong Chen

DOI: https://doi.org/10.1149/06409.0159ecst

2014-01-01

ECS Transactions

Abstract:Ultra-thin cobalt oxide has been deposited on the Pt nanoparticles to enhance the metal nanoparticles thermal stability. The thickness of protective Co3O4 coating layer can be accurately controlled around 1nm via atomic layer deposition. The Pt catalytic activity towards CO oxidation has been investigated in a micro flow reactor. In contrast to alumina oxide coating, the cobalt oxide coated Pt nanoparticles has demonstrated lower conversion temperature than bare Pt nanoparticles. Moreover the coated Pt nanoparticles show good sintering resistance up to 700°C in atmosphere condition.
Experimental study of the interfacial cobalt oxide in Co3O4/a-Al2O3(0001) epitaxial films

C. A. F. Vaz,D. Prabhakaran,E. I. Altman,V. E. Henrich

DOI: https://doi.org/10.1103/PhysRevB.80.155457

2009-10-14

Abstract:A detailed spectroscopic and structural characterization of ultrathin cobalt oxide films grown by O-assisted molecular beam epitaxy on a-Al2O3(0001) single crystals is reported. The experimental results show that the cobalt oxide films become progressively more disordered with increasing thickness, starting from the early stages of deposition. Low energy electron diffraction patterns suggest that the unit cell remains similar to that of a-Al2O3(0001) up to a thickness of 17 A, while at larger thicknesses a pattern identified with that of Co3O4(111) becomes visible. X-ray photoelectron spectroscopy reveals sudden changes in the shape of the Co 2p lines from 3.4 to 17 A cobalt oxide thickness, indicating the transition from an interfacial cobalt oxide layer towards [111]-oriented Co3O4. In particular, the absence of characteristic satellite peaks in the Co 2p lines indicates the formation of a trivalent, octahedrally coordinated, interfacial cobalt oxide layer during the early stages of growth, identified as the Co2O3 corundum phase.

Materials Science
Digital Composition Control of Cobalt Nickel Oxides by ALD for the Oxygen Evolution Reaction

Renee van Limpt,Marek Lavorenti,Mengmeng Lao,Marcel A. Verheijen,Michail N. Tsampas,Mariadriana Creatore

DOI: https://doi.org/10.1149/ma2023-02291504mtgabs

2023-12-22

ECS Meeting Abstracts

Abstract:Anion exchange membrane water electrolysis is a potentially low-cost and sustainable technology for renewable-energy driven hydrogen production. Realisation of its full potential relies on the development of cost-effective, earth-abundant OER electrocatalysts alternatives to the state-of-the art noble metal oxides 1 . Ternary transition metal oxides, such as cobalt nickel oxides, are promising candidates due to their excellent alkali resistance in combination with remarkable catalytic activities. The latter relate to their tuneable oxidation states and variation in coordination of their metal centres. These correlations can be properly investigated when precise control over the layer chemical composition is attained. Atomic layer deposition (ALD) is widely acknowledged to deliver control over film uniformity, thickness and conformality, as well as film chemical composition due to the self-limiting nature of its surface reactions. In this study, an ALD supercycle process based on cobalt cyclopentadienyl (CoCp 2 ) and nickel methylcyclopentadienyl (Ni( Me Cp) 2 ) precursors and an oxygen plasma co-reactant has been developed 2 to investigate the influence of chemical composition and crystallographic properties of cobalt nickel oxide thin films on their electrocatalytic OER performance. Deposition of ~20 nm binary nickel oxide and cobalt oxide results in the growth of polycrystalline films of the rock-salt and spinel phase, respectively. Ternary cobalt nickel oxide films with various ratios can be deposited uniformly, as indicated by energy dispersive x-ray spectroscopy mapping. The mixed oxides display a transition from the +2 oxidation state-based pure rock-salt phase ( 75% at.% Co) upon increasing Co at.% as verified by electron diffraction (figure a) and x-ray photoelectron spectroscopy (XPS). XPS furthermore reveals a linear increase in the Ni 3+ -to-Ni 2+ ratio with increasing Co at.%, which indicates that an inverse spinel structure is formed. The formation of a Ni 3+ -rich inverse spinel cobalt nickel oxide between 55 and 75 at.% Co facilitates the formation of a semi-metallic state (10 2 S/cm) as opposed to the poorly conductive binary oxides (10 -3 S/cm and 10 -2 S/cm for NiO and Co 3 O 4 , respectively). Cyclic voltammetry (CV) measurements in 1M KOH, reveal chemical composition dependent activation behaviour (figure b). Continuous activation behaviour is observed for rock-salt phase films, whilst increment of the Co at.% results in reduced film activation until virtually no activation of the spinel phase films is observed. The activation of the nickel-rich film is accompanied by irreversible redox changes from the +2 to +3 oxidation state as indicated by the integrated non-catalytic wave. Post CV XPS analysis confirms the transition from Co 2+ and Ni 2+ oxidation states to Co 3+ and Ni 3+ . The formation of an (oxy)hydroxide state is observed for the rock-salt dominated films, whilst oxidation states characteristic of a spinel- like oxide structure are observed for the cobalt-rich films. No changes in the transition metal ratios are observed after activation. Scanning electron microscopy images furthermore reveal that the transformation of the Ni-rich films is accompanied by surface restructuring. These results indicate that initial composition can significantly influence the electrocatalytic performance of ternary oxides and therefore highlight the importance of techniques such as atomic layer deposition to study their complex behaviour. 1 Xu et al., Energy Chem., 4 (2022) 100087 2 van Limpt et al., J. Vac. Sci. Technol. A, 41 (2023) 032407 This work has been carried out within the SCALE project (NWA.1237.18.001) funded jointly by the Netherlands Organization for Scientific Research. Authors would like to thank the co-founders of the project ISPT, Syngaschem, VecoPrecision and Vsparticle and international partners Toyota Motor Europe and FORTH institute. Figure: (a) ALD deposited cobalt nickel oxide film show a transition from the +2 oxidation state-based rock-salt phase (NiO) to the spinel structure consisting of mixed +2/+3 oxidation states (Co 3 O 4 ) upon tuning the chemical composition as identified by electron diffraction. (b) This significantly affects the OER-electrocatalytic performance and activation of the films as represented by the current density at 1.8V vs RHE over 500 CV cycles in 1M KOH. Data labels indicate cobalt concentration as at.% Co/(at.% Co+ at.% Ni) . Figure 1
Crystal Facet Induced Single-Atom Pd/CoxOyon a Tunable Metal-Support Interface for Low Temperature Catalytic Oxidation

Zehai Xu,Yufan Zhang,Lei Qin,Qin Meng,Zhen Xue,Liqin Qiu,Guoliang Zhang,Xinwen Guo,Qingbiao Li

DOI: https://doi.org/10.1002/smll.202002071

IF: 13.3

2020-01-01

Small

Abstract:Atomic dispersed metal sites in single-atom catalysts are highly mobile and easily sintered to form large particles, which deteriorates the catalytic performance severely. Moreover, lack of criterion concerning the role of the metal-support interface prevents more efficient and wide application. Here, a general strategy is reported to synthesize stable single atom catalysts by crafting on a variety of cobalt-based nanoarrays with precisely controlled architectures and compositions. The highly uniform, well-aligned, and densely packed nanoarrays provide abundant oxygen vacancies (17.48%) for trapping Pd single atoms and lead to the creation of 3D configured catalysts, which exhibit very competitive activity toward low temperature CO oxidation (100% conversion at 90 degrees C) and prominent long-term stability (continuous conversion at 60 degrees C for 118 h). Theoretical calculations show that O vacancies at high-index {112} facet of Co(x)O(y)nanocrystallite are preferential sites for trapping single atoms, which guarantee strong interface adhesion of Pd species to cobalt-based support and play a pivotal role in preventing the decrement of activity, even under moisture-rich conditions (approximate to 2% water vapor). The progress presents a promising opportunity for tailoring catalytic properties consistent with the specific demand on target process, beyond a facile design with a tunable metal-support interface.
Adsorption and Oxidation of CO on Co3O4/Ir(100) Thin Films

Xu Cao,Dongling Zhang,Xingwang Cheng,Qian Xu,Leijie Zhang,Luchao Huang,Yi Tu,Xin Yu,Tianfu Zhang,Yongwang Li,Hans Niemantsverdriet,Junfa Zhu

DOI: https://doi.org/10.1021/acs.jpcc.2c07515

2022-01-01

Abstract:The combination of noble metals and reducible metal oxides often displays superior catalytic properties in low-temperature CO oxidation reactions. In the present study, we investigated the adsorption and activation of CO on submonolayer and monolayer CoQ(x) films deposited on Ir(100) at low temperature under ultra-high vacuum (UHV) conditions. Using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED), we found that the CoOx films have a (3 x 1) structure and consist of a Co-O bilayer and an O-Co-O trilayer associated with Co2+ and Co3+ states, respectively. A combination of XPS, temperature-programmed desorption (TPD), and infrared reflection absorption spectrum (IRAS) reveals that the presence of the interface of the submonolayer CoOx film and Ir significantly enhances the catalytic activity of cobalt oxide for CO oxidation. In contrast, a monolayer film of CoOx without exposing CoOx-Ir interface sites is hardly active for CO oxidation. CO adsorbs on the bridge sites of Ir atoms on the submonolayer CoOx/Ir(100) surface at 100 K. Upon heating, CO partially reacts with oxygen on the surface to produce CO2, which desorbs at 215 K, while unreacted CO molecules adsorbed on Ir bridge sites migrate to top sites. Increasing the temperature leads to CO2 desorption at 295 and 325 K, arising from the reaction of CO with chemisorbed oxygen on the Ir surface and oxygen of cobalt oxide, respectively. These results reveal the importance of the interface between Ir and cobalt oxide in the oxidation of CO.
Atomic Layer Deposition of Cobalt Carbide Thin Films from Cobalt Amidinate and Hydrogen Plasma

Qipeng Fan,Zheng Guo,Zhuangzhi Li,Zhengduo Wang,Lizhen Yang,Qiang Chen,Zhongwei Liu,Xinwei Wang

DOI: https://doi.org/10.1021/acsaelm.9b00006

IF: 4.494

2019-01-01

ACS Applied Electronic Materials

Abstract:Atomic layer deposition (ALD) of cobalt carbide thin films is reported by using bis(N,N'-diisopropyl-acetamidinato)cobalt(II) (Co(amd)(2)) and H-2 plasma. The process shows a good self-limiting ALD film growth behavior for a fairly wide temperature range from 70 to 160 degrees C, and the growth rate is 0.066 nm/cycle for the deposition within the temperature range. The deposited cobalt carbide thin films are generally smooth and pure, and the film composition is approximately Co3C0.7 for the deposition at 80-200 degrees C. Notably, all the carbon in the as-deposited films forms cobalt carbide, and no carbon-carbon bonds are detected by X-ray photoelectron spectroscopy. Raman spectroscopy also confirms the absence of graphite or amorphous carbon in the as deposited films. The films are nano-polycrystalline as deposited, and the crystal structure is the hexagonal Co3C structure. The films can decompose into hcp-Co metal and amorphous carbon upon the thermal annealing in N-2 at 400 degrees C. The resistivity and magnetization of the as -deposited films are also characterized. It is further shown that by use of this plasma-assisted ALD process highly conformal cobalt carbide films can be deposited into the trench structures with a high aspect ratio of 20:1. In the last, the ALD growth chemistry is studied by using the in situ quartz crystal microbalance (QCM) technique, and the QCM results suggest that the structure of the amidinate ligand in the Co(amd)(2) precursor largely falls apart upon its reaction with the surface during the ALD.
Hierarchical Growth of CoO Nanoflower Thin Films Influencing the Electrocatalytic Oxygen Evolution Reaction

Muhammad Ali Ehsan,Abbas Saeed Hakeem,Abdul Rehman

DOI: https://doi.org/10.1007/s12678-020-00585-z

2020-02-03

Electrocatalysis

Abstract:The 3D architecture of Co(II) oxide (CoO) having oxygen defects has been recognized as a highly functional characteristic towards efficient electrocatalysis of water. Herein, different surface structures of CoO in the form of chemically deposited films were fabricated via AACVD technique, directly over the transparent fluorine-doped tin oxide (FTO) electrodes just by varying the deposition times. The as-prepared films were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). As the deposition time is varied, the surface structure of the CoO changes from nanoparticles that are formed just in 15 min to nanobuds at 30-min deposition, and finally to a homogeneously distributed dense population of nanoflowers in 45 min. The evolution of these structures was also accompanied by a preferential exposure of (111) facets and an increasing number of oxygen defects which resulted in an enhancement of electrocatalytic activity towards water oxidation. The CoO nanoflowers (CoO-NFs) with highest number of these active oxygen vacancies showed the best performance with an overpotential of 325 mV vs RHE for a current density of 10 mA/cm2 while having a Taefl slope of 98 mV/dec, a mass activity of 35.2 A/g, and the electrochemically active surface area (ECSA) of 1069 μF. However, more importantly, the current density for CoO-NF jumped sharply to the values above 200 mA/cm2 with potential less than 1.8 V vs RHE, thereby meeting the commercialization standards while still providing high stabilities of oxygen generation, current densities, and repeated cycling. Such a performance can be considered remarkable for a material fabricated via a rapid and facile synthetic route and is directly deposited on a low cost and relatively less conductive FTO substrate which can be attributed to the synergistic effect of the larger specific surface area of 3D structure and the high distribution of oxygen defects.

chemistry, physical,electrochemistry
Anisotropy, band-to-band transitions, phonon modes, and oxidation properties of cobalt-oxide core-shell slanted columnar thin films

Alyssa Mock,Rafał Korlacki,Chad Briley,Derek Sekora,Tino Hofmann,Peter Wilson,Alexander Sinitskii,Eva Schubert,Mathias Schubert

DOI: https://doi.org/10.1063/1.4941399

IF: 4

2016-02-01

Applied Physics Letters

Abstract:Highly ordered and spatially coherent cobalt slanted columnar thin films (SCTFs) were deposited by glancing angle deposition onto silicon substrates, and subsequently oxidized by annealing at 475 °C. Scanning electron microscopy, Raman scattering, generalized ellipsometry, and density functional theory investigations reveal shape-invariant transformation of the slanted nanocolumns from metallic to transparent metal-oxide core-shell structures with properties characteristic of spinel cobalt oxide. We find passivation of Co-SCTFs yielding Co-Al2O3 core-shell structures produced by conformal deposition of a few nanometers of alumina using atomic layer deposition fully prevents cobalt oxidation in ambient and from annealing up to 475 °C.

physics, applied
Epitaxial Growth of Cobalt Oxide Thin Films on Sapphire Substrates Using Atmospheric Pressure Mist Chemical Vapor Deposition

Hou-Guang Chen,Huei-Sen Wang,Sheng-Rui Jian,Tung-Lun Yeh,Jing-Yi Feng

DOI: https://doi.org/10.3390/coatings13111878

IF: 3.236

2023-11-02

Coatings

Abstract:This study demonstrated the epitaxial growth of single-phase (111) CoO and (111) Co3O4 thin films on a-plane sapphire substrates using an atmospheric pressure mist chemical vapor deposition (mist-CVD) process. The phase structure of the grown cobalt oxide films was manipulated by controlling the growth temperature and process ambient, confirmed through X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy. Furthermore, the electrical properties of Co3O4 films were significantly improved after thermal annealing in oxygen ambient, exhibiting a stable p-type conductivity with an electrical resistivity of 8.35 Ohm cm and a carrier concentration of 4.19 × 1016 cm−3. While annealing CoO in oxygen atmosphere, the Co3O4 films were found to be most readily formed on the CoO surface due to the oxidation reaction. The orientation of the atomic arrangement of formed Co3O4 was epitaxially constrained by the underlying CoO epitaxial layer. The oxidation of CoO to Co3O4 was largely driven by outward diffusion of cobalt cations, resulting in the formation of pores in the interior of formed Co3O4 films.

materials science, multidisciplinary,physics, applied, coatings & films
An in Situ Dealloying and Oxidation Route to Co3O4 Nanosheets and Their Ambient‐Temperature CO Oxidation Activity

Caixia Xu,Yunqing Liu,Ce Zhou,Lin Wang,Haoran Geng,Yi Ding

DOI: https://doi.org/10.1002/cctc.201000275

IF: 4.5

2011-01-01

ChemCatChem

Abstract:Co3O4 nanosheets are straightforwardly fabricated through an in situ dealloying and oxidation process of etching CoAl alloy in alkaline solutions. X-ray diffraction and electron spectroscopy characterizations demonstrate the formation of a Co3O4 nanostructure with an intricate hierarchical nanosheet morphology comprising interconnected nanoslices with the diameter as small as 6 nm. Upon calcination in O-2 atmosphere, these novel Co3O4 nanosheets exhibit excellent catalytic activity toward CO oxidation in normal feed gas at ambient temperature. Catalytic tests reveal the strong influence of calcination temperature on the resultant catalytic activities, whereby 300 degrees C is found to be preferable possibly due to an optimum balance between the surface area and the amount of active species as compared with 200 and 450 degrees C. Moreover, Co3O4 nanosheets showed good time-on-stream catalytic stability; CO conversion at T-50 (the temperature for 50% CO conversion) reduced to 37% after 20 h, and at T-100 (the temperature for full CO conversion) the conversion only decreased to about 90% after 15 h.
Fabrication of morphology and crystal structure controlled nanorod and nanosheet cobalt hydroxide based on the difference of oxygen-solubility between water and methanol, and conversion into Co3O4

Eiji Hosono,Shinobu Fujihara,Itaru Honma,Haoshen Zhou

DOI: https://doi.org/10.1039/b418955h

2005-01-01

Journal of Materials Chemistry

Abstract:Films of brucite-type cobalt hydroxide with nanorod morphology and hydrotalcite-type cobalt hydroxide with nanosheet morphology films were fabricated by heterogeneous nucleation in a chemical bath using water and a mixed solution of water-methanol as solvents, respectively. Since oxygen is around 25 times more soluble in methanol than in water, a methanol solution was used to convert a part of divalent cobalt ions into trivalent cobalt ions through oxidation, due to the amount of dissolved oxygen. The resultant cobalt hydroxides were of the hydrotalcite type, with a sheet-like morphology, and di- and trivalent cobalt ions. On the other hand, brucite-type hydroxides with a rod morphology, constructed using only divalent cobalt ions, were fabricated due to the scarcity of dissolved oxygen in a water-only solvents. Both the brucite and hydrotalcite types of cobalt hydroxide films were transformed into Co3O4 through pyrolysis without nanostructural deformation. The Co3O4 films were porous structures with a large surface area because both rod and sheet were constructed through nanoparticles and nanopores once the self-template was removed.
Formation mechanism and photoelectric properties of Al2O3 film based on atomic layer deposition

Bin Wei,Huimin Chen,Wenqiang Hua,Minyu Chen,Xingwei Ding,Chunya Li

DOI: https://doi.org/10.1016/j.apsusc.2021.151419

IF: 6.7

2022-01-01

Applied Surface Science

Abstract:The formation mechanism of metal oxide films is very important to nanomanufacturing and microelectronic devices. We have prepared the aluminum oxide (Al2O3) films with the thicknesses ranging from 1 to 30 nm by using atomic layer deposition technology. By investigating their morphologies and optoelectrical properties, we found that the Al2O3 films grow on substrate via a layer growth mode by atomic force microscope measurement. Grazing incidence small-angle x-ray scattering further proved that a layer structure parallel to the substrate at the thickness of 5 nm. The water contact angle revealed that 5 nm is critical thickness of physical-film formation. The analysis of dielectric characteristics and the performance of thin film transistors revealed that 30 nm is critical thickness of dielectric-film formation. The understanding on structure–function relationships is necessary to realize the potential application of metal oxide films.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Growth of Ultrathin Cobalt oxide films on Pd(100): Refined Structural Model

Marvin Ch. Schmidt,Jan Smyczek,Patrick Hubert,Mark Cieminski,Paul Kohlmorgen,Swetlana Schauermann

DOI: https://doi.org/10.1016/j.susc.2024.122451

IF: 1.9

2024-01-28

Surface Science

Abstract:We present an atomistic-level study on the growth of cobalt oxide ultra-thin films prepared on Pd(100) substrate performed by a combination of scanning tunneling microscopy (STM) and Low Energy Electron Diffraction (LEED). In this contribution, we report a new surface structure c(12×2)-CoO(111), which co-exist with the previously reported extended c(4×2)-CoO(100) domains at low Co deposition coverages. We demonstrate that the lattice parameters derived for the newly observed hexagonal c(12×2)-CoO(111) phase fit the three- or sixfold lattice parameter of the c(4×2)-CoO(100) layer. The c(12×2)-CoO(111) layer was shown to grow directly on top of the c(4×2)-CoO(100) structure, offering a transition mechanism from rectangularly to hexagonally terminated CoO surface. At growing Co coverages, HEX-CoO(111) domains exhibiting a Moiré pattern followed by the formation of well-defined Co 3 O 4 (111) islands, were prepared and structurally characterized. Both latter phases have been previously reported in the literature. Finally, we provide a refined model for the epitaxial growth of cobalt oxide thin films on Pd(100), including the formation of new c(12×2)-CoO(111) phase.

chemistry, physical,physics, condensed matter
Tuning Interfaces between Cu and Oxide via Atomic Layer Deposition Method for CO2 Hydrogenation to Methanol

Kun Jiang,Huibo Zhao,Yang Chen,Baozhen Li,Zhang Zhang,Fenghai Cao,Lizhi Wu,Yu Tang,Tiesen Li,Li Tan

DOI: https://doi.org/10.1039/d3cy01221b

IF: 6.177

2023-12-03

Catalysis Science & Technology

Abstract:Tailoring the metal-oxide interface by atomic layer depositon (ALD) approach is a promising strategy to modulate active sites for methanol synthesis from CO2 hydrogenation. Herein, the specific Cu/ZnOx/CeO2 interfaces are constructed by controlling the deposition sequence and amount of ZnO in Cu-Zn-Ce oxide catalysts via ALD method. In-depth characterizations demonstrate that Cu+-Zn0-Ce4+ structure is active site for methanol synthesis from CO2 hydrogenation. This strategy provides a viable way for tuning metal-oxide interface to develop catalysts and in favour of precisely understanding the Cu species catalytic-structure activity relationship in the process of CO2 converting to methanol.

chemistry, physical
Constructing Conductive MoOx Thin Films by Plasma Enhanced Atomic Layer Deposition

Ling Zhou,Zhixi Guan,Lin Yang,Daying Guo,Lianhui Wu,Xi'an Chen,Shun Wang

DOI: https://doi.org/10.1002/adem.202301724

IF: 3.6

2024-06-28

Advanced Engineering Materials

Abstract:Herein, we construct amorphous molybdenum oxide films by thermal atomic layer deposition (T‐ALD) and plasma enhanced atomic layer deposition (PE‐ALD). The physical and chemical properties of molybdenum oxide films prepared by the two methods were systematically compared by means of film growth law, atomic force microscope and scanning electron microscope etc. The results show that the amorphous molybdenum oxide physical phase prepared by both atomic layer deposition methods is MoO3. Compared with T‐ALD MoO3, the growth rate of MoO3 thin films prepared by PE‐ALD is higher. Compared to PE‐ALD MoO3, the MoO3 films prepared by T‐ALD did not have nucleation delayed to a laminar growth mode, resulting in smoother deposited films and contained less impurity carbon. The MoO3 prepared by PE‐ALD contains 7.4% impurity carbon. This carbon‐doped film significantly improves the conductivity of the MoO3 film and shows good electrochemical activity. As expected, the MoO3 films prepared by PE‐ALD show good electrocatalytic oxygen evolution reaction. The overpotential was only 259 mV at 10 mA cm‐2 and continued to evolution oxygen for 60 h with almost no attenuation, indicating that carbon doping significantly improves the catalytic intrinsic activity and stability of MoO3. This article is protected by copyright. All rights reserved.

materials science, multidisciplinary
Facile hydrothermally grown cobalt oxide (Co 3 O 4 ) nanostructures and their electrochemical performances

Krishnakumar Athira,Swaminathan Dhanapandian,Selvakumar Suthakaran,Sivadasan Shobika,Krishnan Yogalakshmi,Manikandan Ayyar,Munawar Iqbal

DOI: https://doi.org/10.1515/zpch-2023-0440

2024-02-13

Zeitschrift für Physikalische Chemie

Abstract:In this study, pure cobalt oxide (Co 3 O 4 ) nanoparticles were synthesized using a simple hydrothermal approach. The effect of the reducing agent and reaction temperatures of the prepared products were examined. Co 3 O 4 is formed in the as-synthesized sample, at reaction temperature 190 °C was observed in the XRD pattern. The XPS survey scan spectrum showed the distinctive peaks of the Co and O elements and their valence states. FESEM and HRTEM revealed the particles as cubical in nature. Peak associated with the elements Co and O on the EDAX spectrum demonstrated the purity of the nanoparticles. Three electrode setups were used to measure the electrochemical properties of the synthesized nanoparticles. DTA curve corresponding exothermic peak at 225 °C and the crystallization of the final product was attributed for the third weight loss of 1.5 % in the temperature range of 280 °C to 450 °C. Formation of Co 3 O 4 was confirmed by the observed XRD diffraction peaks at 2 θ = 36.83°, 59.82°, and 65.30°, which correspond to h k l planes (311), (511) and (440), respectively. The high-resolution Co2p spectra showed two prominent spin-orbital peaks, 2p 1/2 and 2p 3/2 , at 796.37 eV and 781.81 eV, respectively. The increase in temperature causes the particle size to grow ranges between 20 and 70 nm and the average particle size distribution in the TEM image is 42 nm. The integral area of the CV curve was measured during the CV measurement and as the as-prepared Co 3 O 4 electrode displays specific capacitance values of 154, 126, 81, 65, and 49 Fg −1 at various scan rates of 10, 20, 50, 70, and 100 mVs −1 , respectively.

chemistry, physical
High-surface-area, Iron-Oxide Films Prepared by Atomic Layer Deposition on Γ-Al2o3

Tzia Ming Onn,Matteo Monai,Sheng Dai,Lisandra Arroyo-Ramirez,Shuyi Zhang,Xiaoqing Pan,George W. Graham,Paolo Fornasiero,Raymond J. Gorte

DOI: https://doi.org/10.1016/j.apcata.2017.01.025

2017-01-01

Abstract:High-surface-area iron oxides were prepared by Atomic Layer Deposition (ALD) on 130-m(2)/g gamma-Al2O3 for use as a catalyst support. Measurements of the sample mass, surface area, and pore-size distribution as a function of the number of ferrocene-O-2 ALD cycles at 623 K suggested that the iron oxide grew as a dense, conformal film with a growth rate similar to 0.016-nm per cycle. While films with 20 ALD cycles (20Fe(2)O(3)Al(2)O(3), 0.25 g Fe2O3/g Al2O3) were difficult to distinguish by HAADF STEM, EDS mapping indicated the Al2O3 was uniformly coated. Raman Spectroscopy showed the films were in the form of Fe2O3; but XRD measurements on samples with as many as 100 ALD cycles (100Fe(2)O(3)-Al2O3, 0.84g Fe2O3/g Al2O3) showed no evidence for crystalline iron-oxide phases, even after calcination at 1073 K. Specific rates for the water-gas-shift (WGS) reaction on the ALD-coated samples were significantly lower than those on bulk Fe2O3. However, addition of 1 wt.% Pd to Fe2O3/Al2O3 supports prepared by ALD exhibited specific rates that were much higher than that observed when I wt.% Pd was added to Fe2O3/Al2O3 prepared by conventional impregnation of Fe salts, suggesting more uniform contact between the Pd and FeOx phases on samples prepared by ALD. (C) 2017 Elsevier B.V. All rights reserved.

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