Dopant Occupancy and UV-Vis-NIR Spectroscopy of Sc:Yb:Tm:LiNbO3 in the 300-3000 nm Wavelength Range

Li Dai,Yuning Wang,Ruirun Chen,Shunxiang Yang,Xianbo Han,Chunrui Liu,Yu Shao
DOI: https://doi.org/10.1002/crat.201900176
2020-01-01
Crystal Research and Technology
Abstract:A series of Sc:Yb:Tm:LiNbO3 crystals with variable Sc3+ (0, 1, 2, and 3 mol%) concentration are grown by the Czochralski method. The effective distribution coefficients of Sc3+, Yb3+, and Tm3+ ions in the Sc:Yb:Tm:LiNbO3 crystals are determined by inductively coupled plasma atomic emission spectrometer. Sc3+ ions distribute uniformly in crystals when Sc3+ concentration reaches up to 3 mol%. The influence of Sc3+ concentration on the dopant occupancy and defect structure of Sc:Yb:Tm:LiNbO3 crystals is investigated by IR transmission spectra. Threshold concentration of Sc3+ ions in Sc:Yb:Tm:LiNbO3 crystals is nearly 3 mol%. By analyzing UV-vis-NIR absorption spectra, absorption property of Sc:Yb:Tm:LiNbO3 crystals is improved by doping Sc3+ ions. Additionally, the Sc:Yb:Tm:LiNbO3 crystals can be pumped by commercially available high power AlGaAs LDs.
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