Controllable growth of multilayered XSe 2 (X = W and Mo) for nonlinear optical and optoelectronic applications
Kun Ye,Lixuan Liu,Liying Chen,Wenlong Li,Bochong Wang,Anmin Nie,Jianyong Xiang,Kun Zhai,Fusheng Wen,Congpu Mu,Zhisheng Zhao,Yongji Gong,Yongjun Tian,Zhongyuan Liu
DOI: https://doi.org/10.1088/2053-1583/ac36b7
IF: 6.861
2021-11-17
2D Materials
Abstract:Abstract The layered transition metal dichalcogenides (TMDs) exhibit the intriguing physical properties and potential application in novel electronic devices. However, controllable growth of multilayer TMDs remains challenging. Herein, large-scale and high-quality multilayer prototype TMDs of W(Mo)Se 2 were synthesized via chemical vapor deposition. For Raman and photoluminescence measurements, 2H and 3R multilayer WSe 2 crystals displayed significant layer-dependent peak position and intensity feature. Besides, different from the oscillatory relationship of second harmonic generation (SHG) intensity for odd–even layer numbers in 2H-stacked multilayer WSe 2 , the SHG intensity of 3R-stacked ones parabolically increased with the thickness due to the absence of inversion symmetry. For device application, photodetectors based on WSe 2 with increasing thickness exhibited p -type (bilayer), ambipolar (trilayer), and n -type (four layers) semiconductor behaviors, respectively. Furthermore, photodetectors based on the as-synthesized 3R-stacked WSe 2 flakes displayed an excellent responsivity of 7.8 × 10 3 mA W −1 , high specific detectivity ( D a * ) of 1.7 × 10 14 Jones, outstanding external quantum efficiency of 8.6 × 10 2 %, and fast response time ( τ Rise = 57 ms and τ Fall = 53 ms) under 532 nm illumination with bias voltage of V ds = 5 V. Similar results have also been achieved in multilayer MoSe 2 crystals. All these findings indicate great potential of 3R-stacked TMDs in two-dimensional optoelectronic applications.
materials science, multidisciplinary