Avoidance conditioning and behavior therapies: a reply to Costello.

A. Powell,A. R. Lumia

DOI: https://doi.org/10.1037/H0031117

1971-07-01

Abstract:

What problem does this paper attempt to address?

Broadband SnS/Te Photodetector to Long-Wavelength Infrared: Breaking the Spectrum Limit Through Alloy Engineering.

Jiahui Wei,Hao Yu,Qianming He,Duanduan Wu,Ying Xie,Changgui Lin

DOI: https://doi.org/10.1364/oe.495083

IF: 3.8

2023-01-01

Optics Express

Abstract:Materials based on group IV chalcogenides, are considered to be one of the most promising materials for high-performance, broadband photodetectors due to their wide bandgap coverage, intriguing chemical bonding and excellent physical properties. However, the reported photodetectors based on SnS are still worked at relatively narrow near-infrared band (as far as 1550 nm) hampered by the nonnegligible bandgap of 1.1-1.5 eV. Here, a novel photodetector based on Te alloyed SnS thin film was demonstrated with an ultra-broadband response up to 10.6 µm. By controlling the Te alloyed concentration in SnS increasing to 37.64%, the bandgap narrows to 0.23 eV, exhibiting a photoresponse potential at long-wavelength infrared excitation. Our results show Te-alloying can remarkably enhance the detection properties of SnS/Te photodetectors. The photoresponsivity and detectivity of 1.59 mA/W and 2.3 × 108 Jones were realized at 10.6 µm at room temperature. Moreover, the nonzero photogain was observed generated by nonlinearly increased photocurrent density, resulting in a superlinear dependency between photoresponsivity and light intensity. Our studies successfully broaden photoresponse spectrum of SnS toward the mid-infrared range for the first time. It also suggests that alloying is an effective technique for tuning the band edges of group IV chalcogenides, contributing deep implications for developing future optoelectronic applications.
Thermal Evaporated Te-Bi 2 Te 3 Alloy Thin Film and Its Nonlinear Optical Properties

Xin He,Rongfei Wei,Xiangling Tian,Jianrong Qiu,Mei Zhang,Qingguang Zeng,Junyan Liu

DOI: https://doi.org/10.1016/j.jallcom.2017.04.251

IF: 6.2

2017-01-01

Journal of Alloys and Compounds

Abstract:Te-Bi2Te3 alloy thin film has grown on silicon dioxide substrate by thermal evaporation technique. The Bi2Te3 rhombohedral structure enriched Te in the prepared thin film was identified by high solution transmission electron microscopy (HRTEM), X-Ray diffraction (XRD), Raman spectrum and X-ray photoelectron spectroscopy (XPS). Interestingly, the Te-Bi2Te3 alloy thin film presents a changeover from saturable absorption (SA) to reverse saturable absorption (RSA) as continuously increasing the input intensity, which has been investigated using the open-aperture (OA) z-scan measurement under a femtosecond-pulsed laser at 800 nm. A high modulation depth of 48.3% and large saturation intensity of 24.1GW/cm(2) of the thin film were obtained. Moreover, a large nonlinear absorption coefficient beta of similar to 10(3) cm/GW is increased with the input intensity elevated. The research results demonstrate that the Te-Bi2Te3 alloy thin film could be an emerging optical material for saturable absorber in Q-switched or mode-locking fiber lasers at low incident intensity while serve as optical limiter at high incident intensity. (C) 2017 Elsevier B.V. All rights reserved.
Ultra-broadband enhanced nonlinear saturable absorption for Mo0.53W0.47Te2 nanosheets

Zhengting Du,Hui Wu,Tianqi Zhang,Zhenda Xie,Yangyang Lu,Xinjie Lu,Jinlong Xu,Gang Zhao,Shining Zhu

DOI: https://doi.org/10.3788/COL202018.021902

IF: 2.56

2020-01-01

Chinese Optics Letters

Abstract:Alloying in two-dimension has been a hot spot in the development of new, versatile systems of optics and electronics. Alloys have been demonstrated to be a fascinating strategy to modulate the chemical and electronic properties of two-dimensional nanosheets. We firstly reported ultra-broadband enhanced nonlinear saturable absorption of Mo0.53W0.47Te2 alloy at 0.6, 1.0, and 2.0 mu m. The nonlinear saturable absorption of Mo0.53W0.47Te2 saturable absorber (SA) was measured by the open aperture Z-scan technique. Compared to MoTe2 and WTe2 SAs, the Mo0.53W0.47Te2 SA showed five times deeper modulation depth, 8.6% lower saturable intensity, and one order larger figure of merit. Thus, our research provides a method of alloys to find novel materials with more outstanding properties for optics and optoelectronic applications.
Enhanced Nonlinear Optical Response of Layered WSe 1.4 Te 0.6 Alloy in 1 Μm Passively Q-switched Laser

Zhengting Du,Tianqi Zhang,Zhenda Xie,Jian Ning,Xinjie Lu,Jinlong Xu,Shining Zhu

DOI: https://doi.org/10.3788/col201917.121404

IF: 2.56

2019-01-01

Chinese Optics Letters

Abstract:Due to the composition-dependent properties of two-dimensional(2D) transition metal dichalcogenides(TMDs), alloying of existing dissimilar TMDs architecture is a novel and controllable route to tailor crystal structures with superior optical and optoelectronic properties. Here, we reported the hexagonal-phase WSe 1.4 Te 0.6 alloy can enable great promise for enhanced saturable absorption response exceeding the parent component WSe 2 and WTe 2 , with larger modulation depth and lower saturable intensity. These advantages allowed the 1064 nm passively Q-switched lasers based on WSe 1.4 Te 0.6 to be more efficient, with pulse duration narrowed to 45%, and slope efficiency increased by 232%. Our findings highlighted the appropriate alloying of TMDs as an effective strategy for development of saturable absorbers.
Turning effect of nonlinear optical properties depends on their phase transition behaviors of Sb2Te2Se thin film

Yiyun Zou,Tengfei Zhang,Xiaoxiao Song,Shubo Zhang,Xintong Zhang,Shenjin Wei,Ertao Hu,Jing Li

DOI: https://doi.org/10.1016/j.matlet.2024.136394

IF: 3

2024-03-01

Materials Letters

Abstract:Tetradymites have extensive application in nonlinear optical devices due to their significant nonlinear optical absorption (NOA). In this work, the NOA properties of tetradymite Sb2Te2Se was investigated. It is found that a switch from reverse saturable absorption (RSA) to saturable absorption (SA) can be achieved with relatively low annealing treatment, and the modulation depth can be finely tuned through variation of crystallinity. In addition, Influence of microstructure and composition on the NOA effect is explored by comparing Sb2Te2Se, Sb2Te3 and Sb2Se3, revealing a competitive mechanism. The study reveals the NOA properties intrinsic to Sb2Te2Se, which offers greater understanding to the improvement of novel NOA materials and nonlinear optical devices.

materials science, multidisciplinary,physics, applied
Alloying induced disorder and localized excitonic states in ternary BexZn1−xO thin films

Longxing Su,Yuan Zhu,Yuanyuan An,Jin Xie,Zikang Tang

DOI: https://doi.org/10.1016/j.jallcom.2021.159867

IF: 6.2

2021-09-01

Journal of Alloys and Compounds

Abstract:II-VI ternary alloy is a promising material for advanced optoelectronic devices like ultraviolet (UV) photodetectors, light emitting diodes and laser diodes with high efficiency and low fabrication cost. The precise control over the doping element, concentration and crystal quality allows careful tuning of their band structures for novel optoelectronic properties. In this work, we report a prominent two-mode behavior in ternary BexZn1−xO alloy using resonant Raman spectroscopy as a probe. By combining with the excitonic localization and extrinsic Fröhlich interaction, we present a theoretical analysis on the resonant Raman scattering with different Be concentrations and tunable measured temperatures. Frequency blue shifts caused by compressed stress and two-mode phonons (ZnO-like and BeO-like A1(LO) phonons) scattering up to third orders revealed in this novel ternary alloy. In addition, alloying induced disorder and electronic states in the forbidden band result in the broadening of line width and the enhancement of LO-phonon oscillator strength. As a result, a high performance BeZnO based photoconductive type UV photodetector was realized, indicating the potential of BeZnO as a promising material for optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Synthesis of WS1.76Te0.24 Alloy Through Chemical Vapor Transport and Its High-Performance Saturable Absorption

Zhengting Du,Chi Zhang,Mudong Wang,Xuejin Zhang,Jian Ning,Xinjie Lv,Gang Zhao,Zhenda Xie,Jinlong Xu,Shining Zhu

DOI: https://doi.org/10.1038/s41598-019-55755-x

IF: 4.6

2019-01-01

Scientific Reports

Abstract:Layered transitional metal dichalcogenides (TMDs) are drawing significant attentions for the applications of optics and optoelectronics. To achieve optimal performances of functional devices, precisely controlled doping engineering of 2D TMDs alloys has provided a reasonable approach to tailor their physical and chemical properties. By the chemical vapor transport (CVT) method and liquid phase exfoliation technique, in this work, we synthesized WS1.76Te0.24 saturable absorber (SA) which exhibited high-performance of nonlinear optics. The nonlinear saturable absorption of the WS1.76Te0.24 SA was also measured by the open aperture Z-scan technique. Compared to that of the binary component WS2 and WTe2, WS1.76Te0.24 SA has shown 4 times deeper modulation depth, 28% lower saturable intensity and a much faster recovery time of 3.8 ps. The passively Q-switched laser based on WS1.76Te0.24 was more efficient, with pulse duration narrowed to 18%, threshold decreased to 28% and output power enlarged by 200%. The promising findings can provide a method to optimize performances of functional devices by doping engineering.
Study on the relationship between carrier mobility and nonlinear optical characteristics of Sb2Te3-Bi2Te3 lateral heterostructure materials and its applications in fiber lasers

Yongjie Wang,Chunyu Song,He Zhang,Liang Jin,Yingtian Xu,Yonggang Zou,Xiaohui Ma

DOI: https://doi.org/10.1039/d2tc01677j

IF: 6.4

2022-07-14

Journal of Materials Chemistry C

Abstract:Topological insulator (TI) as one of Two-dimensional (2D) materials has been widely used in the optoelectronic devices. However, further enhancements of output pulses in ultrafast fiber laser are limited by some aspects in materials, such as the modulation depth and relaxation time. In order to overcome the limitations of individual material and improve the optical properties. In this work, a lateral heterostructure (LHS) material based on Sb2Te3-Bi2Te3 is prepared by hydrothermal synthesis and its nonlinear optical (NLO) performance is measured by twin-detector setup and femtosecond transient absorption spectrometer, finding that the LHS has a shorter recovery time and the modulation depth is nearly three times than other two individual materials. Then this LHS is analyzed via first principle calculation methods and found that carrier mobility by analog computation increases two orders of magnitude compared with individual material Bi2Te3. Finally, this LHS as a saturable absorber (SA) is applied in the Er-doped fiber laser to realize the ultrafast pulse output with the highest repetition rate of 2.29GHz. These results show that the LHS material has a better NLO performance than the individual material Bi2Te3. This approach that takes advantage of LHS to optimize the performance of materials provides a new direction for the design and application of 2D material in optoelectronic devices.

materials science, multidisciplinary,physics, applied
Ultrafast broadband nonlinear response of Al-doped Sb2Se3 at near-infrared

Di Sun,Yu Fang,Kun Liu,Runze Ye,Wenjun Sun,Li Zhao

DOI: https://doi.org/10.1016/j.matlet.2021.130885

IF: 3

2022-01-01

Materials Letters

Abstract:The Al-doped Sb2Se3 nanofilms with broadband nonlinear response and stronger transient absorption intensity (ΔOD > 18) were prepared by co-sputtering. The nonlinear optical properties (NOP) are controlled by Al dopant content, and the nonlinear absorption coefficients and refractive index increase 1.5 times and 5 times compared to pure Sb2Se3 nanofilms due to the free carrier absorption (FCA) and free carrier refraction (FCR) caused by the Al dopant. The Al-doped Sb2Se3 nanofilms provide more reference for broadband nonlinear photonic devices.

materials science, multidisciplinary,physics, applied
Alloy Engineering of Polar (Si,Ge)2N2O System for Controllable Second Harmonic Performance

Lei Kang,Gang He,Xinyuan Zhang,Jiangtao Li,Zheshuai Lin,Bing Huang

DOI: https://doi.org/10.48550/arXiv.2009.06932

2020-09-15

Materials Science

Abstract:Although silicon oxynitrides are important semiconductors for many practical applications, their potential second-order nonlinear optical (NLO) applications, regardless of balanced or controllable performance, have never been systemically explored. Using the first-principles calculations, in this article, we discover that the sinoite (i.e., typical silicon oxynitride Si2N2O) can simultaneously exhibit wide optical bandgap, strong second-harmonic generation (SHG) effect, and large birefringence, which are further confirmed by our preliminary experimental data. Importantly, we propose that alloying engineering can be further applied to control the balanced NLO properties in the Si2N2O system. Combining first-principles calculations and cluster expansion theory, we demonstrate that alloying Ge into Si2N2O can easily form low formation energy Si2(1-x)Ge2xN2O alloys, which can in turn achieve controllable phase-matching harmonic output with high SHG efficiency at different energy ranges. Therefore, alloy engineering could provide a unique approach to effectively control the balanced NLO performance of Si2(1-x)Ge2xN2O, making this polar alloy system holding potential applications in tunable laser frequency conversion and controllable all-optical devices.
Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi2O2S Nanosheets by Defect Engineering.

Junhao Dong,Lesong Zhang,Kuenyao Lau,Yu Shu,Shijin Wang,Zhuang Fu,Zhanggui Wu,Xiaofeng Liu,Baisheng Sa,Jiajie Pei,Jingying Zheng,Hongbing Zhan,Qianting Wang

DOI: https://doi.org/10.1002/smll.202309595

IF: 13.3

2024-01-01

Small

Abstract:Low-dimensional bismuth oxychalcogenides have shown promising potential in optoelectronics due to their high stability, photoresponse, and carrier mobility. However, the relevant studies on deep understanding for Bi2O2S is quite limited. Here, comprehensive experimental and computational investigations are conducted in the regulated band structure, nonlinear optical (NLO) characteristics, and carrier dynamics of Bi2O2S nanosheets via defect engineering, taking O vacancy (OV) and substitutional Se doping as examples. As the OV continuously increased to approximate to 35%, the optical bandgaps progressively narrow from approximate to 1.21 to approximate to 0.81 eV and NLO wavelengths are extended to near-infrared regions with enhanced saturable absorption. Simultaneously, the relaxation processes are effectively accelerated from tens of picoseconds to several picoseconds, as the generated defect energy levels can serve as both additional absorption cross-sections and fast relaxation channels supported by theoretical calculations. Furthermore, substitutional Se doping in Bi2O2S nanosheets also modulate their optical properties with the similar trends. As a proof-of-concept, passively mode-locked pulsed lasers in the approximate to 1.0 mu m based on the defect-rich samples (approximate to 35% OV and approximate to 50% Se-doping) exhibit excellent performance. This work deepens the insight of defect functions on optical properties of Bi2O2S nanosheets and provides new avenues for designing advanced photonic devices based on low-dimensional bismuth oxychalcogenides.
In2Te3 thin films: a promising nonlinear optical material with tunable nonlinear absorption response

Jun Wang,Feng Jin,Xinran Cao,Shuai Cheng,Chaochao Liu,Yafei Yuan,Jie Fang,Haibin Zhao,Jing Li

DOI: https://doi.org/10.1039/c6ra17352g

IF: 4.036

2016-01-01

RSC Advances

Abstract:A series of In2Te3 thin films with various thicknesses was prepared on fused quartz substrate using a radio-frequency magnetron sputtering method. After annealing, the surface morphology, structure and linear optical absorption of these films was investigated. By performing an open aperture Z-scan technique with femtosecond pulses under 800 nm and 400 nm wavelengths, both the sign and magnitude of nonlinear absorption coefficient can be deduced. The experimental results show that In2Te3 thin films exhibit a large and ultrafast third-order nonlinear optical absorption response. Interestingly enough, a turnover from saturation absorption to reverse saturation absorption is observed by adjusting the film's thickness. Herein, a three-level model is presented to determine the tuning behavior and the competition mechanism between ground state absorption and excited state absorption. Moreover, the ultrafast pump-probe experiment furnished evidence of a nonlinear absorption difference, which was mainly caused by the density of defect states.
Molecular Engineering toward an Enlarged Optical Band Gap in a Bismuth Sulfate via Homovalent Cation Substitution

Yingwei Lu,Xingxing Jiang,Chao Wu,Lin Lin,Zhipeng Huang,Zheshuai Lin,Mark G. Humphrey,Chi Zhang

DOI: https://doi.org/10.1021/acs.inorgchem.1c00269

IF: 4.6

2021-04-06

Inorganic Chemistry

Abstract:Materials capable of generating coherent short-wave (<300 nm) light have attracted extensive scientific and technical interest due to their wide utilization in laser research. In this study, a the rare-earth-metal sulfate NaCe(SO4)2(H2O) (NCSO) was synthesized through a hydrothermal method, while NaBi(SO4)2(H2O) (NBSO) was successfully obtained via a homovalent cation substitution of the parent compound NCSO under hydrothermal conditions. The space groups of crystalline NCSO and NBSO are P3121 and P3221, respectively. Both compounds have similar connectivities which feature a three-dimensional channel structure formed by asymmetric [CeO9]15–/[BiO9]15– tricapped trigonal prisms and distorted [SO4]2– tetrahedra. The introduction of Bi3+ with larger ionic radii and stereochemically active lone-pair electrons simultaneously enhanced the SHG effect and band gap of NBSO in comparison to its parent compound NCSO. In contrast to NCSO, which possesses a narrow energy band gap (2.46 eV), NBSO displays the largest energy band gap (4.54 eV) among the reported bismuth sulfate NLO materials. Powder frequency-doubling-effect measurements exhibit that NCSO and NBSO possess phase-matchable SHG responses of 0.2 × KDP and 0.38 × KDP at 1064 nm, respectively. Theoretical studies have been implemented to further elucidate the structure–performance relationships of the two compounds. Experimental and theoretical studies both demonstrate that NBSO may be a promising nonlinear material applied in the short-wavelength region.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.inorgchem.1c00269?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.inorgchem.1c00269</a>.Selected bond lengths and angles, bond valence sumd and hydrogen-bonding interactions, PXRD, IR, TG, EDS, calculated structures, and calculated refractive indexes (<a class="ext-link" href="/doi/suppl/10.1021/acs.inorgchem.1c00269/suppl_file/ic1c00269_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

chemistry, inorganic & nuclear
Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8

W. L. Zhen,W. T. Miao,W. L. Zhu,C. J. Zhang,W. K. Zhu

DOI: https://doi.org/10.1088/1361-648X/ac638b

2022-04-03

Abstract:In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W^-1) and specific detectivity (3.5 * 10^7 Jones) and comparably short response time ({\tau}_rise = 433 ms, {\tau}_decay = 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm^-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta2Ni3Se8 makes it even more important in future electronic and optoelectronic applications.

Mesoscale and Nanoscale Physics,Materials Science,Optics
Evolution of the optical response of the magnetic topological insulators Mn(Bi$_{1-x}$Sb$_{x}$)$_2$Te$_4$ with Sb content

M. Köpf,S. H. Lee,Z. Q. Mao,C. A. Kuntscher

DOI: https://doi.org/10.1103/PhysRevB.106.195118

2022-10-26

Abstract:MnBi$_2$Te$_4$ is a promising representative of intrinsic antiferromagnetic topological insulators, which could enable rare quantum mechanical effects like the quantum anomalous Hall effect. Especially at low temperatures, numerous studies have been reported, demonstrating the great potential of this compound in the magnetically ordered state below $T_{\mathrm{N}}$. Among recent findings, the alloy compound Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ has been suggested to be an interesting candidate for the realization of an ideal Weyl semimetal state. By exchanging Bi by Sb, the electronic structure is influenced in terms of a shift of the Fermi energy, and a decrease in the energy gap has been predicted. In this work, we investigate and compare the optical conductivity of Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ single crystals with various Sb doping levels $x$ by infrared reflectivity measurements. We observe a big impact of the Sb content on the low-energy excitations characterizing the metallic state of our samples. Different $x$=0.26 crystals show significant differences in their optical response and also a strong position dependence. The findings are compared to the recently reported optical conductivity spectrum of the pure compound MnBi$_2$Te$_4$.

Strongly Correlated Electrons
Intrinsic vacancy suppression and band convergence to enhance thermoelectric performance of (Ge, Bi, Sb)Te crystals

Rui Zhang,Jun Pei,Zhihang Shan,Wei Zhou,Yin Wu,Zhijia Han,Ying-Hao Zhao,Jing-Feng Li,Zhen-Hua Ge,Bo-Ping Zhang

DOI: https://doi.org/10.1016/j.cej.2021.132275

IF: 15.1

2022-02-01

Chemical Engineering Journal

Abstract:GeTe-based alloys have drawn increasing attention because of the excellent thermoelectric (TE) performance and potential applications in mid-temperature range. Although reducing carrier concentration by aliovalent doping plays an important role in maximizing the TE performance of GeTe alloys, modulating the intrinsic Ge vacancies is also indispensable. In this work, the intrinsic Ge vacancies of GeTe crystals were suppressed by the synthesis process of temperature gradient cooling technique (TGCT) and Bi-Sb co-doping. The later aliovalent doping also derives a facilitated band convergence, enhanced density-of-state effective mass, and maintained carrier mobility with optimized carrier concentration, along with enhanced phonon scattering from the fluctuations of mass and strain. Benefiting from enhanced electrical properties and reduced thermal conductivity, Ge0.91Bi0.06Sb0.03Te achieved a maximum ZT of 1.9 at 753 K, together with a comparable average ZT of 1.14 at 300–773 K. The results reveal the potential of the TGCT fabrication and Bi-Sb co-doping on enhancing TE performance of GeTe-based alloys with a strengthened suppression of Ge vacancies.

engineering, chemical, environmental
Contrastive investigation on linear optical properties and nonlinear absorption behaviors between Sb2Se3 and Sb2Te3 thin films

Chunmin Liu,Ling Cheng,Yafei Yuan,Jing Su,Xintong Zhang,Xiangxiang Li,Haibin Zhao,Hao Zhang,Yuxiang Zheng,Jing Li

DOI: https://doi.org/10.1088/2053-1591/ab23b0

IF: 2.025

2019-01-01

Materials Research Express

Abstract:Sb-based chalcogenide materials are important for nonlinear devices due to their giant optical nonlinearities even at low irradiance intensities. In this study, the linear optical properties and nonlinear absorption behaviors of two typical Sb-based chalcogenides, Sb2Se3 and Sb2Te3 were systematically studied. The measurements of linear optical properties show that the metallic character of Sb2Te3 is much stronger than that of Sb2Se3. For nonlinear absorption properties, both Sb2Se3 and Sb2Te3 thin films exhibit saturable absorption responses but Sb2Te3 has larger modulation depth. The giant NOA behaviors are attributed to the competition between ground state excitation and excited state absorption. Theoretical calculations reveal that these two materials have large nonlinear absorption coefficients, implying that they are promising materials for innovative ultrafast nonlinear optical devices.
Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi 2 O 2 S Nanosheets by Defect Engineering

Junhao Dong,Lesong Zhang,Kuenyao Lau,Yu Shu,Shijin Wang,Zhuang Fu,Zhanggui Wu,Xiaofeng Liu,Baisheng Sa,Jiajie Pei,Jingying Zheng,Hongbing Zhan,Qianting Wang

DOI: https://doi.org/10.1002/smll.202309595

IF: 13.3

2023-12-28

Small

Abstract:Abstract Low‐dimensional bismuth oxychalcogenides have shown promising potential in optoelectronics due to their high stability, photoresponse, and carrier mobility. However, the relevant studies on deep understanding for Bi 2 O 2 S is quite limited. Here, comprehensive experimental and computational investigations are conducted in the regulated band structure, nonlinear optical (NLO) characteristics, and carrier dynamics of Bi 2 O 2 S nanosheets via defect engineering, taking O vacancy (OV) and substitutional Se doping as examples. As the OV continuously increased to ≈35%, the optical bandgaps progressively narrow from ≈1.21 to ≈0.81 eV and NLO wavelengths are extended to near‐infrared regions with enhanced saturable absorption. Simultaneously, the relaxation processes are effectively accelerated from tens of picoseconds to several picoseconds, as the generated defect energy levels can serve as both additional absorption cross‐sections and fast relaxation channels supported by theoretical calculations. Furthermore, substitutional Se doping in Bi 2 O 2 S nanosheets also modulate their optical properties with the similar trends. As a proof‐of‐concept, passively mode‐locked pulsed lasers in the ≈1.0 μm based on the defect‐rich samples (≈35% OV and ≈50% Se‐doping) exhibit excellent performance. This work deepens the insight of defect functions on optical properties of Bi 2 O 2 S nanosheets and provides new avenues for designing advanced photonic devices based on low‐dimensional bismuth oxychalcogenides.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Compositional tuning in sputter-grown highly-oriented Bi-Te films and their optical and electronic structures

Yuta Saito,Paul Fons,Kotaro Makino,Kirill V Mitrofanov,Fumihiko Uesugi,Masaki Takeguchi,Alexander V Kolobov,Junji Tominaga

DOI: https://doi.org/10.1039/c7nr04709f

IF: 6.7

2017-10-12

Nanoscale

Abstract:Growth of Bi-Te films by helicon-wave magnetron sputtering is systematically explored using alloy targets. The film compositions obtained are found to strongly depend on both the sputtering and antenna-coil powers. The obtainable film compositions range from Bi55Te45 to Bi43Te57 when a Bi2Te3 alloy target is used, and from Bi42Te58 to Bi40Te60 (Bi2Te3) for a Te-rich Bi30Te70 target. All films show strong orientation of the van der Waals layers (00l planes) parallel to the substrate. The atomic level stacking of Bi2Te3 quintuple and Bi bi-layers has been directly observed by high resolution transmission electron microscopy. Band structure simulations reveal that Bi-rich Bi4Te3 bulk is a zero band gap semimetal with a Dirac cone at the Gamma point when spin-orbit coupling is included. Optical measurements also confirm that the material has a zero band gap. The tunability of the composition and the topological insulating properties of the layers will enable the use of these materials for future electronics applications on an industrial scale.
Ultra‐broadband and Thermally Stable NIR Emission in Bi‐doped Glasses and Fibers Enabled by a Metal Reduction Strategy

Weiwei Chen,Yafei Wang,Jing Zhang,Baotian Qiu,Jianrong Qiu,Guoping Dong

DOI: https://doi.org/10.1111/jace.19071

IF: 4.186

2023-01-01

Journal of the American Ceramic Society

Abstract:Bismuth (Bi)-doped glasses with broadband near-infrared (NIR) emission have been drawing increasing interest due to their potential applications in tunable fiber lasers and broadband optical amplifiers. Yet, the implementation of highly efficient and ultra-broadband Bi NIR emission covering the whole telecommunication window remains a daunting challenge. Here, via a metal reduction strategy to simultaneously create a chemically reductive environment during glass melting and enhance the local network rigidity, a super broadband (FWHM approximate to 600 nm) NIR emission covering the entire telecommunications window with greatly enhanced intensity was achieved in Bi-doped germanate glasses. More importantly, due to the excellent thermal stability, the super broadband Bi NIR emission can be well retained after the glass was drawn into an optical fiber. Furthermore, the transmission loss of 0.066 dB/cm at 1310 nm and an obvious broadband amplified spontaneous emission spectrum spanning a range of 1000-1600 nm were observed in this fiber. This work can strengthen our comprehension of the complicated Bi NIR luminescence behaviors and offer a feasible and universal way to fabricate tunable fiber lasers and broadband optical amplifiers based on Bi-doped multicomponent glasses.

Avoidance conditioning and behavior therapies: a reply to Costello.

Broadband SnS/Te Photodetector to Long-Wavelength Infrared: Breaking the Spectrum Limit Through Alloy Engineering.

Thermal Evaporated Te-Bi 2 Te 3 Alloy Thin Film and Its Nonlinear Optical Properties

Ultra-broadband enhanced nonlinear saturable absorption for Mo<sub>0.53</sub>W<sub>0.47</sub>Te<sub>2</sub> nanosheets

Enhanced Nonlinear Optical Response of Layered WSe 1.4 Te 0.6 Alloy in 1 Μm Passively Q-switched Laser

Turning effect of nonlinear optical properties depends on their phase transition behaviors of Sb2Te2Se thin film

Alloying induced disorder and localized excitonic states in ternary BexZn1−xO thin films

Synthesis of WS1.76Te0.24 Alloy Through Chemical Vapor Transport and Its High-Performance Saturable Absorption

Study on the relationship between carrier mobility and nonlinear optical characteristics of Sb2Te3-Bi2Te3 lateral heterostructure materials and its applications in fiber lasers

Ultrafast broadband nonlinear response of Al-doped Sb2Se3 at near-infrared

Alloy Engineering of Polar (Si,Ge)2N2O System for Controllable Second Harmonic Performance

Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi2O2S Nanosheets by Defect Engineering.

In2Te3 thin films: a promising nonlinear optical material with tunable nonlinear absorption response

Molecular Engineering toward an Enlarged Optical Band Gap in a Bismuth Sulfate via Homovalent Cation Substitution

Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8

Evolution of the optical response of the magnetic topological insulators Mn(Bi$_{1-x}$Sb$_{x}$)$_2$Te$_4$ with Sb content

Intrinsic vacancy suppression and band convergence to enhance thermoelectric performance of (Ge, Bi, Sb)Te crystals

Contrastive investigation on linear optical properties and nonlinear absorption behaviors between Sb2Se3 and Sb2Te3 thin films

Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi 2 O 2 S Nanosheets by Defect Engineering

Compositional tuning in sputter-grown highly-oriented Bi-Te films and their optical and electronic structures

Ultra‐broadband and Thermally Stable NIR Emission in Bi‐doped Glasses and Fibers Enabled by a Metal Reduction Strategy