Abstract:The effect of antistructural defects and sulfur vacancies on the electronic structure andoptical properties of few‐layer hexagonal Znln2S4 is studied via versatile spectroscopic tools and theoreticalcal culations. These unique features including extrinsic absorption, rich recombination paths, gate tunability, and in‐plane dipole orientation are definitely a benefit to the advanced orientation‐functional optoelectronic applications. Defect engineering is promising to tailor the physical properties of 2D semiconductors for function‐oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects and their influence on physical properties of 2D ternary semiconductors are not clarified. Here, the effect of defects on the electronic structure and optical properties of few‐layer hexagonal Znln2S4 is thoroughly studied via versatile spectroscopic tools in combination with theoretical calculations. It is demonstrated that the Zn–In antistructural defects induce the formation of a series of donor and acceptor energy levels and sulfur vacancies induce donor energy levels, leading to rich recombination paths for defect emission and extrinsic absorption. Impressively, the emission of donor–acceptor pair in Znln2S4 can be significantly tailored by electrostatic gating due to efficient tunability of Fermi level (Ef). Furthermore, the layer‐dependent dipole orientation of defect emission in Znln2S4 is directly revealed by back focal plane imagining, where it presents obviously in‐plane dipole orientation within a dozen‐layer thickness of Znln2S4. These unique features of defects in Znln2S4 including extrinsic absorption, rich recombination paths, gate tunability, and in‐plane dipole orientation are definitely a benefit to the advanced orientation‐functional optoelectronic applications.

Mechanism of Effect of Intrinsic Defects on Electrical and Optical Properties of Cu2CdSnS4: an Experimental and First-Principles Study

Intrinsic Charged Defects and Lithium-Ion Transport Mechanisms in CdPS3

First-Principles Study Of Point Defects In Solar Cell Semiconductor Cuins2

Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductorcu2znsns4

Elucidating Structural Disorder and the Effects of Cu Vacancies on the Electronic Properties of Cu2ZnSnS4

Effect of Anti-Site Point Defects on the Mechanical and Thermodynamic Properties of MgZn2, MgCu2 Laves Phases: A First-Principle Study

Dynamics of Bound Exciton Complexes in CdS Nanobelts.

First-Principles Investigation Of The Band Structure Of Cds

Intrinsic defects in photovoltaic perovskite variant Cs2SnI6

Direct vapour transport grown Cu2SnS3 crystals: exploring structural, elastic, optical, and electronic properties

Theoretical Study of Defects in Cu$_3$SbSe$_4$: Search for Optimum Dopants for Enhancing Thermoelectric Properties

Ab Initio Calculation of Impurity Effects in Copper Oxide Materials

Mapping the Energetics of Defect States in Cu2ZnSnS4 films and the Impact of Sb Doping

Evolution of Cation Ordering and Crystal Defects Controlled by Zn Substitutions in Cu2SnS3 Ceramics

Intrinsic Lamellar Defects Containing Atomic Cu in Cu2X (X = S, Se) Thermoelectric Materials

Defect Emission and Its Dipole Orientation in Layered Ternary Znln2S4 Semiconductor

Point defects in CdTe and CdTeSe alloy: a first principles investigation with DFT+U

Intrinsic lamellar defects containing atomic Cu in Cu 2 X (X = S, Se) thermoelectric materials

Intrinsic defects and the influences on electrical transport properties in quaternary diamond-like compounds: Cd2Cu3In3Te8 as an example

Electronic Properties of Copper(I) Thiocyanate (CuSCN)

Stability and Electronic Structure of Cu2znsns4 Surfaces: First-Principles Study