Properties of BaTbO(3) and La(3)CuO(4+delta) thin films for HTS device applications

R Hojczyk,U Poppe,CL Jia,M Faley,R Dittmann,C Horstmann,A Engelhardt,G Ockenfuss,K Urban
1997-01-01
Abstract:La(2)CuO(4+delta), BaTbO(3) and SrTbO(3) were tested as insulating and barrier materials for high-T(C) superconductor (HTS) thin film devices. Whereas La(2)CuO(4+delta) is a semiconductor with a layered structure, BaTbO(3) and SrTbO(3) are insulating perovskite materials with a pseudocubic structure. Thin films of these materials have been fabricated by sputtering. By exposing the La(2)CuO(4+delta) film to an oxygen microwave plasma it becomes metallic and superconducting al 32K. The microstructure of YBa(2)Cu(3)O(7-x)/BaTbO(3)/YBa(2)Cu(3)O(7-x) multilayer films was investigated by high-resolution transmission electron microscopy (HRTEM). Although the lattice mismatch in this system is about 10 %, the interface is atomically sharp and no localized misfit dislocations occur at the interface. This leads to a very small distortion of the lattice in the vicinity of the interface. We have fabricated crossover structures using BaTbO(3) as insulating layer. Field-effect devices containing BaTbO(3) as a dielectric and Josephson junctions with a BaT6O(3) barrier and a BaTbO(3) insulating layer could be produced successfully.
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