Electric current-induced abnormal Cu/gamma-InSn4 interfacial reactions

Sinn-wen Chen,Shih-kang Lin
DOI: https://doi.org/10.1557/JMR.2006.0378
IF: 2.7
2006-01-01
Journal of Materials Research
Abstract:The electromigration effect upon the gamma-InSn4/Cu interfacial reactions have been studied by examining the gamma-InSn4/Cu/gamma-InSn4 couples annealed at 160 degrees C with and without current stressing. Scallop-type eta-Cu-6(Sn,In)(5) phase layers are formed in the couples without current stressing and at the gamma-InSn4/Cu interface where electrons are flowing from the gamma-InSn4 to the Cu. The reaction path is Cu/eta-Cu-6(Sn,In)(5)/gamma-InSn4. However, very large eta-Cu-6(Sn,In)(5) compounds are found at the Cu/gamma-InSn4 interface where electrons are from Cu to the gamma-InSn4. Although the melting points of both gamma-InSn4 and Cu are higher than 160 degrees C, the liquid phase is formed at 160 degrees C in the electrified couple at the downstream gamma-InSn4 phase near the Cu/gamma-InSn4 interface. The reaction path is Cu/eta-Cu-6(Sn,In)(5)/liquid/gamma-InSn4. The liquid phase propagates along the grain boundaries of the gamma-InSn4 matrix. The very large eta-Cu-6(Sn,In)(5) compounds are the coupling results of the liquid phase penetration and the Cu transport enhancement due to electromigration.
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