Cu2Zn(Si,Ge)Se4 Quaternary Semiconductors As Potential Photovoltaic Materials

M. Jibran,X. Sun,J. Hua,B. Wang,Y. Yamauchi,B. Da,Z. J. Ding
DOI: https://doi.org/10.1016/j.cplett.2020.137820
IF: 2.719
2020-01-01
Chemical Physics Letters
Abstract:The geometric and electronic structures of Cu2ZnSixGe1-xSe4 alloys are studied using density functional theory calculations. The variation of lattice constants is less than 1.2%. Negative formation enthalpies are obtained, indicating these alloys are completely miscible. The conduction band minimum gradually shifts upward with the Si concentration, resulting in a tunable bandgap from 1.27 to 2.26 eV. The bandgap of the Cu2ZnSi0.25Ge0.75Se4 alloy is very close to the optimal value. Compared with other two well-studied alloys with the optimal bandgap (Cu2ZnSi0.5Sn0.5Se4 and Cu2ZnSnS4), the Cu2ZnSi0.25Ge0.75Se4 has a red-shift in the optical absorption edge, highest absorption coefficient and smallest transmittance.
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