Oxidation/ablation behaviors of hafnium carbide-silicon carbonitride systems at 1500 and 2500 C

Na Ni,Wei Hao,Tianyu Liu,Lei Zhou,Fangwei Guo,Xiaofeng Zhao,Ping Xiao
DOI: https://doi.org/10.1016/j.ceramint.2020.06.161
IF: 5.532
2020-01-01
Ceramics International
Abstract:The oxide scales of hafnium carbide (HfC) typically exhibit a porous structure after oxidation/ablation due to the release of gas oxidation products, which allows oxygen penetration to promote the rapid oxidation of the HfC matrices. Here, we report that the oxidation/ablation resistance of HfC was enhanced by the incorporation of amorphous silicon carbonitride (SiCN). HfC-SiCN ceramics with 10 vol % SiCN showed a significant improvement in the oxidation/ablation resistance compared with pure HfC. The HfC-10 vol % SiCN ceramic has a higher density with good mechanical properties. After being oxidized at 1500 degrees C for 2 h, a dense and homogeneous HfO2-HfSiO4 layer with low oxygen permeability is formed. The ablation resistance of the HfC-10 vol % SiCN ceramic is improved due to the formation of the triple-layer structure oxide with good thermal stability and mechanical scouring resistance. After ablation under an oxyacetylene flame for 60 s, the mass and linear ablation rates of HfC-10 vol % SiCN ceramic are -0.019 mg cm(-2) s(-1) and-0.156 mu m s(-1), respectively.
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