Suppressing Intrinsic Self-Doping Of Cspbibr(2)Films For High-Performance All-Inorganic, Carbon-Based Perovskite Solar Cells

Zeyang Zhang,Fengqin He,Weidong Zhu,Dandan Chen,Wenming Chai,Dazheng Chen,He Xi,Jincheng Zhang,Chunfu Zhang,Yue Hao

DOI: https://doi.org/10.1039/d0se00774a

2020-01-01

Abstract:CsPbIBr(2)is promising for all-inorganic, carbon-based perovskite solar cells (PSCs), owing to its quite balanced bandgap and stability characteristics. However, the serious self-doping phenomenon in one-step solution-processed CsPbIBr(2)films that causes decreased built-in potentials (V(bi)s) and intensified carrier recombination hinders further performance optimization of the resulting PSCs. Herein, we demonstrate that such an obstacle can be overcome through rationally tailoring CsPbIBr(2)precursor stoichiometry. Experimental results consistently show that a PbBr2-rich precursor tends to reinforce self-doping in the CsPbIBr(2)film, while a CsI-rich one helps to weaken it. Thus, CsPbIBr(2)films with a much lower self-doping level are achieved based on the CsI-rich precursor with an optimized CsI/PbBr(2)stoichiometric ratio of 1.1 : 1.0. The films possess a pure phase, much fewer compositional defects, and increased work function, resulting in suppressed carrier recombination and extendedV(bi)of the final PSCs. Consequently, their average efficiency is boosted to (9.92 +/- 0.56)%, far exceeding those of films fabricated with a stoichiometric precursor with the value of (8.32 +/- 0.61)%. Particularly, the champion CsPbIBr2PSC delivers a superior efficiency of 10.48% and an outstanding photovoltage of 1.32 V. This work represents a major leap for CsPbIBr2PSCs and paves the way for their further exploration to achieve better performance.