Heterogeneous Electronic and Photonic Devices Based on Monolayer Ternary Telluride Core/Shell Structures

Kai Xu,Ankit Sharma,Sangmin Kang,Junzhe Kang,Xiaoqiao Hu,Zheng Hao,Wenjuan Zhu
DOI: https://doi.org/10.1002/adma.202002548
IF: 29.4
2020-01-01
Advanced Materials
Abstract:Device engineering based on the tunable electronic properties of ternary transition metal dichalcogenides has recently gained widespread research interest. In this work, monolayer ternary telluride core/shell structures are synthesized using a one-step chemical vapor deposition process with rapid cooling. The core region is the tellurium-rich WSe(2-2x)Te(2x)alloy, while the shell is the tellurium-poor WSe(2-2y)Te(2y)alloy. The bandgap of the material is approximate to 1.45 eV in the core region and approximate to 1.57 eV in the shell region. The lateral gradient of the bandgap across the monolayer heterostructure allows for the fabrication of heterogeneous transistors and photodetectors. The difference in work function between the core and shell regions leads to a built-in electric field at the heterojunction. As a result, heterogeneous transistors demonstrate a unidirectional conduction and strong photovoltaic effect. The bandgap gradient and high mobility of the ternary telluride core/shell structures provide a unique material platform for novel electronic and photonic devices.
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